NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FE

SWITCHMODE SERIES NPN POWER TRANSISTORS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induct

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induc

SWITCHMODE SERIES NPN POWER TRANSISTORS

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,pow«r switching in inductive circuit, they are particularly suited for 115 and 220 V switcmode applications such as switching regulators.inverters.DC -DC and converter FEATURES: • Collector-Emittor Sustainin

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in ind

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features low collector saturation voltage, fast switching speed, wide base reverse-bias SOA. Applications High-speed high-voltage converters, and high-frequency power amplifiers.

Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220

三极管

双极晶体管

Silicon NPN Power Transistors

文件：211.37 Kbytes Page：4 Pages

SILICON POWER TRANSISTO

文件：241.84 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：150.72 Kbytes Page：4 Pages

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power

SILICON POWER TRANSISTO

文件：241.84 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：211.37 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：211.37 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：220.23 Kbytes Page：3 Pages