Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induct

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in ind

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FE

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induc