HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

NPN General Purpose Switching Transistor

Voltage 40V Current 600mA Features • NPN epitaxial Silicon, Planar Design • Collector-emitter voltage VCE = 40V • Collector current = 600mA • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per IEC61249 Std.. (Halogen Free)

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：F12；NPN-General use transistor

NPN-General use transistor 225mW 50m 20V Quality level and executive standard ◆ “G”level QZJ840611 Q/FRQZJ123-2007 ◆ the Ⅱ level of national standard GB4589.1-89 GB/T 12560-1999 Q/FR124-2007 Applications： Can be used for switching and amplifying in various ele

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

NPN Silicon Epitaxial Transistor

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS)

Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO= 150 V (min) • Low output capacitance: Cob= 5.0 pF (max) • High transition frequency: fT= 120 MHz (typ.)

50mA , 200V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage • High Transition Frequency

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High breakdown voltage, low output capacitance, high fT. Applications TV video output, high voltage switching and driver stage of audio amplifier applications.

T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Transition Frequency

isc Silicon NPN Pow Transistor

DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching applications • Driver stage audio amplifier applications • Black and white TV

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=150V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 10mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

TRANSISTOR(NPN)

Old Company Name in Catalogs and Other Documents

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TRANSISTOR (NPN)

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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Silicon NPN Triple Diffused Type (PCT Process)

文件：124.69 Kbytes Page：5 Pages

晶体管

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 150V 0.05A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused Type (PCT Process)

文件：124.69 Kbytes Page：5 Pages

NPN Plastic Encapsulated Transistor

文件：356.7 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 150V 0.05A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个