NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN-General use transistor

NPN-General use transistor 225mW 50m 20V Quality level and executive standard ◆ “G”level QZJ840611 Q/FRQZJ123-2007 ◆ the Ⅱ level of national standard GB4589.1-89 GB/T 12560-1999 Q/FR124-2007 Applications： Can be used for switching and amplifying in various ele

NPN Silicon Epitaxial Transistor

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V

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NPN Transistors

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