NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 300m Watts of Power Dissipation. • Collector-current : ICM=50mA • Collector-base Voltage:V(BR)CBO= 50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs

NPN Plastic Encapsulated Transistor

FEATURES • Amplifier dissipation NPN Silicon

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Description Silicon NPN transistor in a TO-92 Plastic Package. Features High gain, good hFE linearity. Features TV final picture IF amplifier applications.

NPN Silicon Plastic-Encapsulate Transistor

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