TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of hFE.

NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 300m Watts of Power Dissipation. • Collector-current : ICM=50mA • Collector-base Voltage:V(BR)CBO= 50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Description Silicon NPN transistor in a TO-92 Plastic Package. Features High gain, good hFE linearity. Features TV final picture IF amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier Dissipation NPN Silicon

NPN Plastic Encapsulated Transistor

FEATURES • Amplifier dissipation NPN Silicon

双极晶体管

Small Signal Transistor

中等功率双极型晶体管

NPN Silicon Plastic-Encapsulate Transistor

文件：274.01 Kbytes Page：2 Pages

Silicon NPN transistor in a SOT-23 Plastic Package

Description Silicon NPN transistor in a SOT-23 Plastic Package. Features High gain, good hFE linearity. Applications TV final picture IF amplifier applications.

NPN Silicon Plastic-Encapsulate Transistor

文件：274.01 Kbytes Page：2 Pages

NPN Plastic Encapsulated Transistor

文件：257.19 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 45V 0.05A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个