TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications.

TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ)

NPN Plastic Encapsulated Transistor

FEATURES ● High hFE and low VCE(sat) hFE(IC=100mA)： 200(Typ) VCE(sat)(700mA)： 0.2V(Typ)

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES • High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ)

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High total power dissipation, low VCE(sat) and high hFE. Applications Output stage of portable radio and cassette type tape recorder, general purpose applications.

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2001 is designed for use in output state of portable RADIO and cassette type tape recorder, general purpose applications.

双极型晶体管

小信号晶体管

晶体管

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Plastic Encapsulated Transistor

文件：478.89 Kbytes Page：2 Pages

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes Page：2 Pages

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes Page：2 Pages

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个