NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Plastic-Encapsulate Transistor

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TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Plastic Encapsulated Transistor

FEATURES ● High hFE and low VCE(sat) hFE(IC=100mA)： 200(Typ) VCE(sat)(700mA)： 0.2V(Typ)

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2001 is designed for use in output state of portable RADIO and cassette type tape recorder, general purpose applications.

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个