NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs