封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.