2SC200晶体管资料

  • 2SC200别名:2SC200三极管、2SC200晶体管、2SC200晶体三极管

  • 2SC200生产厂家:日本富士通公司

  • 2SC200制作材料:Si-NPN

  • 2SC200性质:甚高频 (VHF)_宽频带放大 (A)_TR

  • 2SC200封装形式:直插封装

  • 2SC200极限工作电压:40V

  • 2SC200最大电流允许值:0.3A

  • 2SC200最大工作频率:350MHZ

  • 2SC200引脚数:3

  • 2SC200最大耗散功率:0.65W

  • 2SC200放大倍数

  • 2SC200图片代号:C-40

  • 2SC200vtest:40

  • 2SC200htest:350000000

  • 2SC200atest:0.3

  • 2SC200wtest:0.65

  • 2SC200代换 2SC200用什么型号代替:BFR97,BFR98,BFS23,BFX33,BFX55,BLY34,2N3866,2SC2852,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2000isdesignedforuseinAM/RFstageofCARRADIOandgeneralpurposeapplications.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MediumPowerAmplifiersandSwitches

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

NPNPlasticEncapsulatedTransistor

FEATURES ●HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2001isdesignedforuseinoutputstateofportableRADIOandcassettetypetaperecorder,generalpurposeapplications.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplications.

DCCOM

Dc Components

DCCOM

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES •HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Hightotalpowerdissipation,lowVCE(sat)andhighhFE. Applications Outputstageofportableradioandcassettetypetaperecorder,generalpurposeapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFEandLowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

TO-92Plastic-EncapsulateTransistors

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2002isdesignedforuseindriverstageofhighvoltageaudioequipments.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2003isdesignedforuseindriverstageofhighvoltageaudioequipments.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNPlasticEncapsulatedTransistor

文件:478.89 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconPlastic-EncapsulateTransistor

文件:309.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

文件:309.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

文件:309.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

文件:309.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.7A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

2SC200产品属性

  • 类型

    描述

  • 型号

    2SC200

  • 功能描述

    2SC200 TO92 N9H1C NOTES

更新时间:2025-6-20 18:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
1926+
TO-92
6852
只做原装正品现货!或订货假一赔十!
NEC
24+
TO220
990000
明嘉莱只做原装正品现货
TOSHIBA/东芝
23+
TO-3P
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
CJ/长电
21+
TO-92
24000
百域芯优势 实单必成 可开13点增值税发票
NEC
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
24+
4255
NEC
24+
TO92
6980
原装现货,可开13%税票
CJ/长电
22+
TO-92
301000
原装正品现货,可开13点税
长电
24+
TO-92
9000
只做原装正品 有挂有货 假一赔十
ERICSSON/爱立信
23+
TO-59
8510
原装正品代理渠道价格优势

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