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2SC20晶体管资料

  • 2SC20别名:2SC20三极管、2SC20晶体管、2SC20晶体三极管

  • 2SC20生产厂家:日本东芝公司

  • 2SC20制作材料:Si-NPN

  • 2SC20性质:低频或音频放大 (LF)_开关管 (S)

  • 2SC20封装形式:直插封装

  • 2SC20极限工作电压:40V

  • 2SC20最大电流允许值:0.4A

  • 2SC20最大工作频率:90MHZ

  • 2SC20引脚数:3

  • 2SC20最大耗散功率:0.6W

  • 2SC20放大倍数

  • 2SC20图片代号:C-40

  • 2SC20vtest:40

  • 2SC20htest:90000000

  • 2SC20atest:0.4

  • 2SC20wtest:0.6

  • 2SC20代换 2SC20用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N2217,2N2218,2N2219,2M3053,3DK4A,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2000isdesignedforuseinAM/RFstageofCARRADIOandgeneralpurposeapplications.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

TO-92Plastic-EncapsulateTransistors

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

MediumPowerAmplifiersandSwitches

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

NPNPlasticEncapsulatedTransistor

FEATURES ●HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2001isdesignedforuseinoutputstateofportableRADIOandcassettetypetaperecorder,generalpurposeapplications.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplications.

DCCOM

Dc Components

DCCOM

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES •HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Hightotalpowerdissipation,lowVCE(sat)andhighhFE. Applications Outputstageofportableradioandcassettetypetaperecorder,generalpurposeapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFEandLowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2002isdesignedforuseindriverstageofhighvoltageaudioequipments.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2003isdesignedforuseindriverstageofhighvoltageaudioequipments.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

RPPOWERTRANSISTOR

SonySony Semiconductor Solutions Group

索尼

Sony

GeneralSmallSignalAmp.EpitaxialPlanarNPNSiliconTransistors

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highbreakdownvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Highbreakdownvoltage APPLICATIONS •Seriesregulator,switch,andgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffusedPlanarTransistor(SeriesRegulator,Switch,andGeneralPurpose)

Application:SeriesRegulator,Switch,andGeneralPurpose

SankenSanken electric

三垦三垦电气株式会社

Sanken

NPNSILICONTRANSISTOR

DESCRIPTION SuitableforlownoiseamplifierintheVHFtoUHFband. FEATURES ●NF3.0dbTYP.@f=500MHz ●Gpe15dbTYP.@f=500MHz ●fT2.0GHzTYP.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoise NF=3.0dBTYP.@f=500MHz •HighPowerGain Gpe=15dBTYP.@f=500MHz •HighGainBandwidthProduct fT=2.0GHzTYP. APPLICATIONS •DesignedforuseinlownoiseamplifiersintheVHF~UHFband.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •Forhighvoltage,powerswitchingand TVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

FUJITSUTRANSISTOR

FUJITSUTRANSISTOR

FujitsuFujitsu Component Limited.

富士通富士通株式会社

Fujitsu

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) •GoodLinearityofhFE •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforlow-frequencypoweramplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FUJITSUTRANSISTOR

FUJITSUTRANSISTOR

FujitsuFujitsu Component Limited.

富士通富士通株式会社

Fujitsu

FUJITSUTRANSISTOR

FUJITSUTRANSISTOR

FujitsuFujitsu Component Limited.

富士通富士通株式会社

Fujitsu

SiNPNEpitaxialPlanar

SiNPNEpitaxialPlanar TransceiverPowerOutput Features •VCBO=120V

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

TOSHIBATRANSTSTORSILICONNPNEPITAXIALTYPE

*27MhzRFPowerAmplifierApplications *Recomendedfor1WMobileRadioOutputStageandDriverStageof4WTransmitter.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC2050

NPNSILICONTRANSISTOR

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNEPITAXIALPLANARTYPE(forRFamplifiersonVHFbandMobileradioapplications)

2SC2053isasiliconNPNepitaxialplanartypetransistordesingedforRFamplifiersonVHFbandmobilearadioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

NPNEPITAXIALPLANARTYPE(forRFamplifiersonVHFbandportableorhand-heldradioapplications)

DESCRITION 2SC2055isasiliconNPNepitaxialplanartypetransistordesignedforRFamplifiersonVHFbandportableorhand-heldradioapplications. FEATURES ●Highpowergain:Gpe≥13dB @VCC=7.2V,PO=0.2W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

NPNEPITAXIALPLANARTYPE(forRFpoweramplifiersinVHFbandportableorhand-heldradioapplications)

DESCRIPTION 2SC2056isasiliconNPNepitaxialplanartypettransistordesignedforRFamplifiersonVHFbandportableorhand-heldradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

TRANSISTORNPNEPITAXIALPLANAR

Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics.

ROHMRohm

罗姆罗姆半导体集团

ROHM

High-frequencyAmplifierTransistor(25V,50mA,300MHz)

High-frequencyAmplifierTransistor (25V,50mA,300MHz) Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics.

ROHMRohm

罗姆罗姆半导体集团

ROHM

TO-92MODPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE ●PowerDissipationPCM:0.75W(Ta=25℃) ●LowSaturationVoltage(VCE(sat)=0.15Vat500mA) ●ComplementaryPairwith2SA934

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features HighPC,lowcollectorsaturationvoltage,complementarypairwith2SA934. Applications 1~2Wlowfrequencyamplifiers.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

ediumPowerAmp.EpitaxialPlanarNPNSiliconTransistor

Features 1)Highbreakdownvoltage:VCEO=80V 2)Largecurrentcapacity: Ic=700mA

ROHMRohm

罗姆罗姆半导体集团

ROHM

High-gainAmplifierTransistor(32V,0.3A)

Features 1)DarlingtonconnectionforahighhFE.(DCcurrentgain=5000(Min.)atVCE=3V,IC=0.1A.) 2)Highinputimpedance.

ROHMRohm

罗姆罗姆半导体集团

ROHM

RFAmplifierEpitaxialPlanarNPNSiliconTransistors

Features 1)Smallcollectorcapacitance:Cob=1.6pF(Typ.) 2)Lowbaseresistanceandhighgainforgoodnoiseresponse.

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTORNPNEPITAXIALPLANAR

Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SILICONNPNTRIPLEDIFFUSEDTYPE(PCTPROCESS)

COLORTVCHROMAOUTPUTAPPLICATION FEATURES HighVoltage:VCEO=300V SmallCollectoroutputCapcitance:Cob=4.0pF(max.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

POWERTRANSISTORS(1.5A,150V,25W)

1.5AMPEREPOWERTRANSISTOR150VOLTS25WATTS

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SA940 APPLICATIONS ·Poweramplifierapplications ·Verticaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=150V(Min) ·WideAreaofSafeOperation ·ComplementtoType2SA940 APPLICATIONS ·Poweramplifierapplications. ·Verticaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPSiliconEpitaxialPowerTransistor

FEATURES ●Complementsthe2SC2073. APPLICATIONS ●PowerAmplifierApplications. ●VerticalOutputApplications.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

NPNSiliconEpitaxialPowerTransistor

FEATURES ●Complementsthe2SA940. ●WideSafeOperationgArea. ●FastSwitchingSpeed. ●WideASO.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

NPNSILICONPOWERTRANSISTOR

DESCRIPTION TheUTC2SC2073isanNPNsiliconpowertransistors,itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollectorbasevoltage,etc.TheUTC2SC2073issuitableforgeneralpurposePoweramplifier,verticaloutputapplication. FEATURES *Highcollectorbasev

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

TO-220-3LPlastic-EncapsulateTransistors

FEATURES WidesafeOperatingArea. Complementaryto2SA940

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TRANSISTOR(POWERAMPLIFIER,VERTICALOUTPUTAPPLICATIONS)

POWERAMPLIFIERAPPLICATION VERTICALOUTAPPLICATION ●WideSafeOperatingArea. ●Complementaryto2SA940A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNtransistorinaTO-220FPlasticPackage.

Description SiliconNPNtransistorinaTO-220FPlasticPackage. Features WideSafeOperatingArea,complementaryto2SA940A. Applications Poweramplifierapplications,verticaloutputapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Hightransitionfrequency ·Wideareaofsafeoperation APPLICATIONS ·27MHzpoweramplifierapplications ·RecommendedforoutputstageapplicationofAM4Wtransmitter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Hightransitionfrequency •Wideareaofsafeoperation APPLICATIONS •27MHzpoweramplifierapplications •Recommendedforoutputstageapplication ofAM4Wtransmitter

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONNPNEPITAXIALTYPE(PCTPROCESS)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC20产品属性

  • 类型

    描述

  • 型号

    2SC20

  • 功能描述

    2SC200 TO92 N9H1C NOTES

更新时间:2025-8-5 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三凌原装
24+
TO-92L
7500
郑重承诺只做原装进口现货
MITSUBISH
21+
TO-92L
628
原装现货假一赔十
MITSUBISHI/三菱
22+
TO-92
100000
代理渠道/只做原装/可含税
MITSUBISHI
24+
三极管
3560
原装现货假一罚十
ST/意法
24+
NA/
167
优势代理渠道,原装正品,可全系列订货开增值税票
MITSUMI
2016+
TO-92
3000
只做原装,假一罚十,公司可开17%增值税发票!
三凌
25+
T0-92L
51848
百分百原装现货 实单必成 欢迎询价
MITSUBI
18+
T092L
85600
保证进口原装可开17%增值税发票
三凌MIT
24+
TO-92L
365000
绝对原装现货可出样品批量可议价
HGF
2024
TO-92L
58209
16余年资质 绝对原盒原盘代理渠道 更多数量

2SC20芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

2SC20数据表相关新闻