2SC20晶体管资料
2SC20别名:2SC20三极管、2SC20晶体管、2SC20晶体三极管
2SC20生产厂家:日本东芝公司
2SC20制作材料:Si-NPN
2SC20性质:低频或音频放大 (LF)_开关管 (S)
2SC20封装形式:直插封装
2SC20极限工作电压:40V
2SC20最大电流允许值:0.4A
2SC20最大工作频率:90MHZ
2SC20引脚数:3
2SC20最大耗散功率:0.6W
2SC20放大倍数:
2SC20图片代号:C-40
2SC20vtest:40
2SC20htest:90000000
- 2SC20atest:0.4
2SC20wtest:0.6
2SC20代换 2SC20用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N2217,2N2218,2N2219,2M3053,3DK4A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NPNSILICONTRANSISTOR DESCRIPTION The2SC2000isdesignedforuseinAM/RFstageofCARRADIOandgeneralpurposeapplications. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
TO-92Plastic-EncapsulateTransistors MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MediumPowerAmplifiersandSwitches MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
NPNPlasticEncapsulatedTransistor FEATURES ●HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC2001isdesignedforuseinoutputstateofportableRADIOandcassettetypetaperecorder,generalpurposeapplications. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplications. | DCCOM Dc Components | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES •HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
SiliconNPNtransistorinaTO-92PlasticPackage Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Hightotalpowerdissipation,lowVCE(sat)andhighhFE. Applications Outputstageofportableradioandcassettetypetaperecorder,generalpurposeapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFEandLowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconPlastic-EncapsulateTransistor Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC2002isdesignedforuseindriverstageofhighvoltageaudioequipments. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC2003isdesignedforuseindriverstageofhighvoltageaudioequipments. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
RPPOWERTRANSISTOR
| SonySony Semiconductor Solutions Group 索尼 | |||
GeneralSmallSignalAmp.EpitaxialPlanarNPNSiliconTransistors FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable. | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highbreakdownvoltage APPLICATIONS ·Seriesregulator,switch,andgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Highbreakdownvoltage APPLICATIONS •Seriesregulator,switch,andgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusedPlanarTransistor(SeriesRegulator,Switch,andGeneralPurpose) Application:SeriesRegulator,Switch,andGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
NPNSILICONTRANSISTOR DESCRIPTION SuitableforlownoiseamplifierintheVHFtoUHFband. FEATURES ●NF3.0dbTYP.@f=500MHz ●Gpe15dbTYP.@f=500MHz ●fT2.0GHzTYP. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoise NF=3.0dBTYP.@f=500MHz •HighPowerGain Gpe=15dBTYP.@f=500MHz •HighGainBandwidthProduct fT=2.0GHzTYP. APPLICATIONS •DesignedforuseinlownoiseamplifiersintheVHF~UHFband. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •Forhighvoltage,powerswitchingand TVhorizontaloutputapplications | SAVANTIC Savantic, Inc. | |||
FUJITSUTRANSISTOR FUJITSUTRANSISTOR | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) •GoodLinearityofhFE •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforlow-frequencypoweramplification | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
FUJITSUTRANSISTOR FUJITSUTRANSISTOR | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | |||
FUJITSUTRANSISTOR FUJITSUTRANSISTOR | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | |||
SiNPNEpitaxialPlanar SiNPNEpitaxialPlanar TransceiverPowerOutput Features •VCBO=120V | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TOSHIBATRANSTSTORSILICONNPNEPITAXIALTYPE *27MhzRFPowerAmplifierApplications *Recomendedfor1WMobileRadioOutputStageandDriverStageof4WTransmitter. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
2SC2050 NPNSILICONTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNEPITAXIALPLANARTYPE(forRFamplifiersonVHFbandMobileradioapplications) 2SC2053isasiliconNPNepitaxialplanartypetransistordesingedforRFamplifiersonVHFbandmobilearadioapplications. | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
NPNEPITAXIALPLANARTYPE(forRFamplifiersonVHFbandportableorhand-heldradioapplications) DESCRITION 2SC2055isasiliconNPNepitaxialplanartypetransistordesignedforRFamplifiersonVHFbandportableorhand-heldradioapplications. FEATURES ●Highpowergain:Gpe≥13dB @VCC=7.2V,PO=0.2W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
NPNEPITAXIALPLANARTYPE(forRFpoweramplifiersinVHFbandportableorhand-heldradioapplications) DESCRIPTION 2SC2056isasiliconNPNepitaxialplanartypettransistordesignedforRFamplifiersonVHFbandportableorhand-heldradioapplications. | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
TRANSISTORNPNEPITAXIALPLANAR Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics. | ROHMRohm 罗姆罗姆半导体集团 | |||
High-frequencyAmplifierTransistor(25V,50mA,300MHz) High-frequencyAmplifierTransistor (25V,50mA,300MHz) Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics. | ROHMRohm 罗姆罗姆半导体集团 | |||
TO-92MODPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
TO-92LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE ●PowerDissipationPCM:0.75W(Ta=25℃) ●LowSaturationVoltage(VCE(sat)=0.15Vat500mA) ●ComplementaryPairwith2SA934 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features HighPC,lowcollectorsaturationvoltage,complementarypairwith2SA934. Applications 1~2Wlowfrequencyamplifiers. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
ediumPowerAmp.EpitaxialPlanarNPNSiliconTransistor Features 1)Highbreakdownvoltage:VCEO=80V 2)Largecurrentcapacity: Ic=700mA | ROHMRohm 罗姆罗姆半导体集团 | |||
High-gainAmplifierTransistor(32V,0.3A) Features 1)DarlingtonconnectionforahighhFE.(DCcurrentgain=5000(Min.)atVCE=3V,IC=0.1A.) 2)Highinputimpedance. | ROHMRohm 罗姆罗姆半导体集团 | |||
RFAmplifierEpitaxialPlanarNPNSiliconTransistors Features 1)Smallcollectorcapacitance:Cob=1.6pF(Typ.) 2)Lowbaseresistanceandhighgainforgoodnoiseresponse. | ROHMRohm 罗姆罗姆半导体集团 | |||
TRANSISTORNPNEPITAXIALPLANAR Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics. | ROHMRohm 罗姆罗姆半导体集团 | |||
SILICONNPNTRIPLEDIFFUSEDTYPE(PCTPROCESS) COLORTVCHROMAOUTPUTAPPLICATION FEATURES HighVoltage:VCEO=300V SmallCollectoroutputCapcitance:Cob=4.0pF(max.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
POWERTRANSISTORS(1.5A,150V,25W) 1.5AMPEREPOWERTRANSISTOR150VOLTS25WATTS | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA940 APPLICATIONS ·Poweramplifierapplications ·Verticaloutputapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=150V(Min) ·WideAreaofSafeOperation ·ComplementtoType2SA940 APPLICATIONS ·Poweramplifierapplications. ·Verticaloutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPSiliconEpitaxialPowerTransistor FEATURES ●Complementsthe2SC2073. APPLICATIONS ●PowerAmplifierApplications. ●VerticalOutputApplications. | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
NPNSiliconEpitaxialPowerTransistor FEATURES ●Complementsthe2SA940. ●WideSafeOperationgArea. ●FastSwitchingSpeed. ●WideASO. | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
NPNSILICONPOWERTRANSISTOR DESCRIPTION TheUTC2SC2073isanNPNsiliconpowertransistors,itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollectorbasevoltage,etc.TheUTC2SC2073issuitableforgeneralpurposePoweramplifier,verticaloutputapplication. FEATURES *Highcollectorbasev | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
TO-220-3LPlastic-EncapsulateTransistors FEATURES WidesafeOperatingArea. Complementaryto2SA940 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(POWERAMPLIFIER,VERTICALOUTPUTAPPLICATIONS) POWERAMPLIFIERAPPLICATION VERTICALOUTAPPLICATION ●WideSafeOperatingArea. ●Complementaryto2SA940A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNtransistorinaTO-220FPlasticPackage. Description SiliconNPNtransistorinaTO-220FPlasticPackage. Features WideSafeOperatingArea,complementaryto2SA940A. Applications Poweramplifierapplications,verticaloutputapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Hightransitionfrequency ·Wideareaofsafeoperation APPLICATIONS ·27MHzpoweramplifierapplications ·RecommendedforoutputstageapplicationofAM4Wtransmitter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Hightransitionfrequency •Wideareaofsafeoperation APPLICATIONS •27MHzpoweramplifierapplications •Recommendedforoutputstageapplication ofAM4Wtransmitter | SAVANTIC Savantic, Inc. | |||
SILICONNPNEPITAXIALTYPE(PCTPROCESS)
| TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |
2SC20产品属性
- 类型
描述
- 型号
2SC20
- 功能描述
2SC200 TO92 N9H1C NOTES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三凌原装 |
24+ |
TO-92L |
7500 |
郑重承诺只做原装进口现货 |
|||
MITSUBISH |
21+ |
TO-92L |
628 |
原装现货假一赔十 |
|||
MITSUBISHI/三菱 |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
MITSUBISHI |
24+ |
三极管 |
3560 |
原装现货假一罚十 |
|||
ST/意法 |
24+ |
NA/ |
167 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MITSUMI |
2016+ |
TO-92 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
三凌 |
25+ |
T0-92L |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
MITSUBI |
18+ |
T092L |
85600 |
保证进口原装可开17%增值税发票 |
|||
三凌MIT |
24+ |
TO-92L |
365000 |
绝对原装现货可出样品批量可议价 |
|||
HGF |
2024 |
TO-92L |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
2SC20规格书下载地址
2SC20参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC2139
- 2SC2138
- 2SC2137
- 2SC2135
- 2SC2134
- 2SC213
- 2SC212
- 2SC211
- 2SC210
- 2SC21
- 2SC209
- 2SC208
- 2SC207
- 2SC2060
- 2SC206
- 2SC2058
- 2SC2056
- 2SC2055
- 2SC2053
- 2SC2050
- 2SC205
- 2SC2043
- 2SC204
- 2SC2036
- 2SC2034
- 2SC203
- 2SC2028
- 2SC2027
- 2SC2026
- 2SC2023
- 2SC2022
- 2SC2021
- 2SC2020
- 2SC202
- 2SC201
- 2SC2003
- 2SC2002
- 2SC2001
- 2SC2000
- 2SC200
- 2SC199
- 2SC1986
- 2SC1985
- 2SC1983
- 2SC1980
- 2SC198(A)
- 2SC1975
- 2SC1974
- 2SC1973
- 2SC1972
- 2SC1971
- 2SC1970
- 2SC197
- 2SC1969
- 2SC1968
- 2SC1967
- 2SC1966
- 2SC196
- 2SC1959
- 2SC1953
- 2SC195
- 2SC1947
- 2SC1946
- 2SC1945
- 2SC1944
- 2SC194
- 2SC193
- 2SC192
- 2SC191
- 2SC190
- 2SC19
- 2SC189
- 2SC188
- 2SC187
- 2SC186
- 2SC185
- 2SC184
- 2SC183A
- 2SC183
- 2SC182
2SC20数据表相关新闻
2SB857L-TO252R-D-TG_UTC代理商
2SB857L-TO252R-D-TG_UTC代理商
2023-3-22SC1815L-TO92K-Y-TG_UTC代理商
2SC1815L-TO92K-Y-TG_UTC代理商
2023-2-152SB857L-TO126CK-D-TG_UTC代理商
2SB857L-TO126CK-D-TG_UTC代理商
2023-2-142SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103