丝印代码：2SC2073；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide safe Operating Area. Complementary to 2SA940

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2000 is designed for use in AM/RF stage of CAR RADIO and general purpose applications.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2001 is designed for use in output state of portable RADIO and cassette type tape recorder, general purpose applications.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications.

TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES • High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ)

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High total power dissipation, low VCE(sat) and high hFE. Applications Output stage of portable radio and cassette type tape recorder, general purpose applications.

NPN Plastic Encapsulated Transistor

FEATURES ● High hFE and low VCE(sat) hFE(IC=100mA)： 200(Typ) VCE(sat)(700mA)： 0.2V(Typ)

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ)

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.6 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN Silicon Plastic-Encapsulate Transistor

Features ▪ Capable of 0.6Watts of Power Dissipation. ▪ Collector-current 0. 7A ▪ Collector-base Voltage 30V ▪ Operating and storage junction temperature range: -55°C to +150°C ▪ Epoxy meets UL 94 V-0 flammability rating ▪ Moisure Sensitivity Level 1 ▪ Marking: C2001 ▪ Lead Free Finish/Rohs

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2002 is designed for use in driver stage of high voltage audio equipments.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2003 is designed for use in driver stage of high voltage audio equipments.

RP POWER TRANSISTOR

General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage APPLICATIONS • Series regulator, switch, and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage APPLICATIONS ·Series regulator, switch, and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Series Regulator, Switch, and General Purpose)

Application : Series Regulator, Switch, and General Purpose

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF= 3.0dB TYP. @ f= 500MHz • High Power Gain Gpe= 15dB TYP. @ f= 500MHz • High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS • Designed for use in low noise amplifiers in the VHF~UHF band.

NPN SILICON TRANSISTOR

DESCRIPTION Suitable for low noise amplifier in the VHF to UHF band. FEATURES ● NF 3.0 db TYP. @f = 500 MHz ● Gpe 15 db TYP. @f = 500 MHz ● fT 2.0 GHz TYP.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For high voltage ,power switching and TV horizontal output applications

FUJITSU TRANSISTOR

FUJITSU TRANSISTOR

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • Good Linearity of hFE • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low-frequency power amplification

FUJITSU TRANSISTOR

FUJITSU TRANSISTOR

FUJITSU TRANSISTOR

FUJITSU TRANSISTOR

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar Transceiver Power Output Features • VCBO = 120V

TOSHIBA TRANSTSTOR SILICON NPN EPITAXIAL TYPE

* 27Mhz RF Power Amplifier Applications * Recomended for 1W Mobile Radio Output Stage and Driver Stage of 4W Transmitter.

2SC2050

NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)

2SC2053 is a silicon NPN epitaxial planar type transistor desinged for RF amplifiers on VHF band mobile a radio applications.

NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)

DESCRITION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES ● High power gain: Gpe ≥ 13dB @VCC = 7.2V, PO = 0.2W, f = 175MHz ● Emitter ballasted construction, gold metallization for high

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band portable or hand-held radio applications)

DESCRIPTION 2SC2056 is a silicon NPN epitaxial planar type ttransistor designed for RF amplifiers on VHF band portable or hand-held radio applications.

TRANSISTOR NPN EPITAXIAL PLANAR

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

High-frequency Amplifier Transistor(25V, 50mA, 300MHz)

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● Power Dissipation PCM: 0.75 W (Ta=25℃) ● Low Saturation Voltage (VCE(sat)=0.15V at 500mA) ● Complementary Pair with 2SA934

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High PC, low collector saturation voltage, complementary pair with 2SA934. Applications 1~2W low frequency amplifiers.

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

edium Power Amp. Epitaxial Planar NPN Silicon Transistor

Features 1) High breakdown voltage: VCEO=80V 2) Large current capacity: Ic=700mA

丝印代码：TP；High-gain Amplifier Transistor ( 32V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE= 3V, IC = 0.1A.) 2) High input impedance.

TRANSISTOR NPN EPITAXIAL PLANAR

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

RF Amplifier Epitaxial Planar NPN Silicon Transistors

Features 1) Small collector capacitance: Cob = 1.6pF (Typ.) 2) Low base resistance and high gain for good noise response.

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

COLOR TV CHROMA OUTPUT APPLICATION FEATURES High Voltage : VCEO = 300V Small Collector output Capcitance : Cob=4.0 pF (max.)

NPN SILICON POWER TRANSISTOR

DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc. The UTC 2SC2073 is suitable for general purpose Power amplifier, vertical output application. FEATURES * High collector base v

POWER TRANSISTORS(1.5A,150V,25W)

1.5 AMPERE POWER TRANSISTOR 150 VOLTS 25 WATTS

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications

NPN Silicon Epitaxial Power Transistor

FEATURES ● Complements the 2SA940. ● Wide Safe Operationg Area. ● Fast Switching Speed. ● Wide ASO.

PNP Silicon Epitaxial Power Transistor

FEATURES ● Complements the 2SC2073. APPLICATIONS ● Power Amplifier Applications. ● Vertical Output Applications.

Silicon NPN transistor in a TO-220F Plastic Package.

Description Silicon NPN transistor in a TO-220F Plastic Package. Features Wide Safe Operating Area, complementary to 2SA940A. Applications Power amplifier applications, vertical output applications.

TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS)

POWER AMPLIFIER APPLICATION VERTICAL OUT APPLICATION ● Wide Safe Operating Area. ● Complementary to 2SA940A

SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application of AM 4W transmitter

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High transition frequency • Wide area of safe operation APPLICATIONS • 27MHz power amplifier applications • Recommended for output stage application of AM 4W transmitter