NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)

DESCRITION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES ● High power gain: Gpe ≥ 13dB @VCC = 7.2V, PO = 0.2W, f = 175MHz ● Emitter ballasted construction, gold metallization for high

RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reli ● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n   Driver amplifiers in general in VHF band portable or hand-held;