2SC181晶体管资料

  • 2SC181别名:2SC181三极管、2SC181晶体管、2SC181晶体三极管

  • 2SC181生产厂家:日本日立公司

  • 2SC181制作材料:Ge-NPN

  • 2SC181性质:开关管 (S)

  • 2SC181封装形式:直插封装

  • 2SC181极限工作电压:25V

  • 2SC181最大电流允许值:0.4A

  • 2SC181最大工作频率:10MHZ

  • 2SC181引脚数:3

  • 2SC181最大耗散功率:0.12W

  • 2SC181放大倍数

  • 2SC181图片代号:C-47

  • 2SC181vtest:25

  • 2SC181htest:10000000

  • 2SC181atest:0.4

  • 2SC181wtest:0.12

  • 2SC181代换 2SC181用什么型号代替:AC176,AC187,ASY73,ASY74,ASY75,2N1304,3BX81B,

型号 功能描述 生产厂家 企业 LOGO 操作

SPECIFICATION TRANSISTORS,DIODES

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati

BILIN

银河微电

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

DCCOM

道全

isc Silicon NPN Transistor

DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

JIANGSU

长电科技

NPN Transistor

Features ● Power dissipation

KEXIN

科信电子

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

TGS

Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

LUGUANG

鲁光电子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

DGNJDZ

南晶电子

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. Applications Audio frequency general purpose ,driver stage amplifier applications.

FOSHAN

蓝箭电子

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

KOOCHIN

灏展电子

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

NPN Epitaxial Planar Tansistor

NPN Epitaxial Planar Tansistor

FCI

富加宜

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

DCCOM

道全

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

TGS

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

WINNERJOIN

永而佳

Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

NPN Transistor Epitaxial Planar Transistor

Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.

SECOS

喜可士

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

SPECIFICATION TRANSISTORSS,DIODES

SPECIFICATION TRANSISTORSS / DIODES

ETCList of Unclassifed Manufacturers

未分类制造商

RP POWER TRANSISTOR

2SC1817 is designed for HF and VHF Power Amplifier Applictions. Most useful for 12-Watt SSB citizens Band Transcever Output Stage.

SonySony Corporation

索尼

Si NPN Triple Diffused Planar

Si NPN Triple Diffused Planar Color TV Chroma Output Features • High VCEO • Large collector dissipation

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.

SAVANTIC

NPN EPITAXIAL SILICON TRANSISTOR

文件:99.39 Kbytes Page:1 Pages

WINNERJOIN

永而佳

NPN EPITAXIAL SILICON TRANSISTOR

WINNERJOIN

永而佳

NPN EPITAXIAL SILICON TRANSISTOR

文件:93.88 Kbytes Page:1 Pages

WINNERJOIN

永而佳

Low Frequency Amplifier NPN Epitaxial Silicon Transistor

文件:891.61 Kbytes Page:7 Pages

FUTUREWAFER

Bipolar Transistor

UTC

友顺

晶体管

JSCJ

长晶科技

Low Level and General Purpose Amplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

NPN Transistors

文件:987.55 Kbytes Page:2 Pages

KEXIN

科信电子

isc Silicon NPN Transistor

文件:235.34 Kbytes Page:2 Pages

ISC

无锡固电

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

文件:142.85 Kbytes Page:4 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:279.37 Kbytes Page:4 Pages

TOSHIBA

东芝

COLOR TELEVISION N1PS Chassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

COLOR TELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

2SC181产品属性

  • 类型

    描述

  • 型号

    2SC181

  • 功能描述

    SPECIFICATION TRANSISTORS,DIODES

更新时间:2025-12-25 18:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
TO-92
8540
只做原装正品现货或订货假一赔十!
CJ/长晶
25+
SOT23
157463
明嘉莱只做原装正品现货
25+
54000
公司现货库存
25+
54000
公司现货库存
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货2SC1815即刻询购立享优惠#长期有排单订
友顺 UTC
23+
TO-92
22560
原装正品,实单请联系
蓝箭
24+
SOT-23
33500
全新进口原装现货,假一罚十
长电
23+
TO-92
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOS
24+
TO92
66500
只做原装进口现货
TOSHIBA
2021+
TO92
16800
全新原装正品,自家优势现货

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