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2SC181晶体管资料

2SC181别名：2SC181三极管、2SC181晶体管、2SC181晶体三极管
2SC181生产厂家：日本日立公司
2SC181制作材料：Ge-NPN
2SC181性质：开关管（S）
2SC181封装形式：直插封装
2SC181极限工作电压：25V
2SC181最大电流允许值：0.4A
2SC181最大工作频率：10MHZ
2SC181引脚数：3
2SC181最大耗散功率：0.12W
2SC181放大倍数：
2SC181图片代号：C-47
2SC181vtest：25
2SC181htest：10000000
2SC181atest：0.4
2SC181wtest：0.12

2SC181代换 2SC181用什么型号代替：AC176,AC187,ASY73,ASY74,ASY75,2N1304,3BX81B,

型号	功能描述	生产厂家企业	LOGO
2SC1810	SPECIFICATION TRANSISTORS,DIODES Coming Soon. If you have some information on related parts, please share useful information by adding links below.	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC1815	丝印代码：C1815；Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815	丝印代码：C1815；Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (	TOSHIBA 东芝	TOSHIBA
2SC1815	NPN Transistor Features ● Power dissipation	KEXIN 科信电子	KEXIN
2SC1815	NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V	SECOS 喜可士	SECOS
2SC1815	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification.	DCCOM 道全	DCCOM
2SC1815	NPN EPITAXIAL PLANAR TRANSISTOR Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.	TGS	TGS
2SC1815	NPN SILICON TRANSISTOR	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SC1815	丝印代码：C1815；Audio Frequency General Purpose Amplifier Applications Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Power dissipation	DGNJDZ 南晶电子	DGNJDZ
2SC1815	丝印代码：HF；Silicon Epitaxial Planar Transistor FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati	BILIN 银河微电	BILIN
2SC1815	丝印代码：C1815；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815	isc Silicon NPN Transistor DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.	ISC 无锡固电	ISC
2SC1815	NPN Epitaxial Planar Tansistor NPN Epitaxial Planar Tansistor	FCI 富加宜	FCI
2SC1815	丝印代码：HF；Silicon Epitaxial Planar Transistor FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g	LUGUANG 鲁光电子	LUGUANG
2SC1815	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Power dissipation	JIANGSU 长电科技	JIANGSU
2SC1815	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation	KOOCHIN 灏展电子	KOOCHIN
2SC1815	Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. Applications Audio frequency general purpose ,driver stage amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SC1815	NPN Transistors Features ● Power dissipation	YFWDIODE 佑风微	YFWDIODE
2SC1815	SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	CENTRAL	CENTRAL
2SC1815_07	Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (	TOSHIBA 东芝	TOSHIBA
2SC1815-BL	SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	CENTRAL	CENTRAL
2SC1815-BL	NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :	MCC	MCC
2SC1815GR	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification.	DCCOM 道全	DCCOM
2SC1815GR	Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815GR	NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V	SECOS 喜可士	SECOS
2SC1815GR	NPN SILICON TRANSISTOR	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SC1815-GR	SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	CENTRAL	CENTRAL
2SC1815-GR	NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :	MCC	MCC
2SC1815-H	丝印代码：HF；NPN Transistors Features ● Power dissipation	YFWDIODE 佑风微	YFWDIODE
2SC1815K	NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V	SECOS 喜可士	SECOS
2SC1815L	TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815-L	丝印代码：HFL；NPN Transistors Features ● Power dissipation	YFWDIODE 佑风微	YFWDIODE
2SC1815L-GR	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815LT1	NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA	WINNERJOIN 永而佳	WINNERJOIN
2SC1815LT1	SOT-23 Plastic-Encapsulate Transistors (NPN) TRANSISTOR (NPN) FEATURES Power dissipation	TGS	TGS
2SC1815L-Y	Audio Frequency General Purpose Amplifier Applications Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)	TOSHIBA 东芝	TOSHIBA
2SC1815-O	SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	CENTRAL	CENTRAL
2SC1815-O	NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :	MCC	MCC
2SC1815W	NPN Transistor Epitaxial Planar Transistor Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.	SECOS 喜可士	SECOS
2SC1815-Y	NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :	MCC	MCC
2SC1815-Y	SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	CENTRAL	CENTRAL
2SC1816	SPECIFICATION TRANSISTORSS,DIODES SPECIFICATION TRANSISTORSS / DIODES	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC1817	RP POWER TRANSISTOR 2SC1817 is designed for HF and VHF Power Amplifier Applictions. Most useful for 12-Watt SSB citizens Band Transcever Output Stage.	SONYSony Corporation 索尼	SONY
2SC1819	Si NPN Triple Diffused Planar Si NPN Triple Diffused Planar Color TV Chroma Output Features • High VCEO • Large collector dissipation	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC1819M	Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.	SAVANTIC	SAVANTIC
2SC1819M	Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.	ISC 无锡固电	ISC
2SC1812	NPN EPITAXIAL SILICON TRANSISTOR 文件：99.39 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SC1812	NPN EPITAXIAL SILICON TRANSISTOR	WINNERJOIN 永而佳	WINNERJOIN
2SC1812_15	NPN EPITAXIAL SILICON TRANSISTOR 文件：93.88 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SC1815	Low Frequency Amplifier NPN Epitaxial Silicon Transistor 文件：891.61 Kbytes Page：7 Pages	FUTUREWAFER	FUTUREWAFER
2SC1815	NPN Transistors 文件：987.55 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SC1815	COLOR TELEVISION N1PS Chassis 文件：2.69679 Mbytes Page：54 Pages	TOSHIBA 东芝	TOSHIBA
2SC1815	COLOR TELEVISION 文件：2.69679 Mbytes Page：54 Pages	TOSHIBA 东芝	TOSHIBA
2SC1815	COLOUR TELEVISION C9PJ Chassis 文件：6.49885 Mbytes Page：126 Pages	TOSHIBA 东芝	TOSHIBA
2SC1815	Bipolar Transistor	UTC 友顺	UTC
2SC1815	晶体管	JSCJ 长晶科技	JSCJ
2SC1815	Low Level and General Purpose Amplifiers 文件：84.74 Kbytes Page：1 Pages	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SC1815	丝印代码：C1815；Audio Frequency General Purpose Amplifier Applications 文件：279.37 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC1815	isc Silicon NPN Transistor 文件：235.34 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SC181产品属性

类型
描述
PCM(W)：
0.4
IC(A)：
0.15
VCBO(V)：
60
VCEO(V)：
50
VEBO(V)：
5
hFEMin：
70
hFEMax：
700
hFE@VCE(V)：
6
hFE@IC(A)：
0.002
VCE(sat)(V)：
0.25
VCE(sat)\u001E@IC(A)：
0.1
VCE(sat)\u001E@IB(A)：
0.01
Package：
TO-92

2SC181供应商更多...

更新时间：2026-5-15 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SC1815L-GR	UTC	2016+	TO-92	10029	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	2SC1815LT1-AT	TGS	2026+	SOT23	54648	百分百原装现货实单必成欢迎询价	询价
深圳市创新迹电子有限公司	2SC1815L-GR-T92-B	UTC/友顺	25+	TO-92	8000	只有原装	询价
中天科工半导体（深圳）有限公司	2SC1815L-GR-T92-B	UTC/友顺	25+	TO92	55000	UTC/友顺2SC1815L-GR-T92-B即刻询购立享优惠#长期有货	询价
深圳市振宏微科技有限公司	2SC1815L-GR-T92-K	UTC	23+	NA	109	专做原装正品,假一罚百!	询价
深圳市富芯乐电子科技有限公司	2SC1815L-GR-T92-B	UTC	24+	TO-92	18026	只做原装正品现货欢迎来电查询15919825718	询价
深圳市赛美科科技有限公司	2SC1815LT1	JIANGSU		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市威雅利发展有限公司	2SC1815LT1	TGS	04+	SOT-23	2284	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市卓越微芯电子有限公司	2SC1815L-GR-T92-B	UTC	25+	TO-92	20000	原装正品价格优惠,志同道合共谋发展	询价
深圳市美思瑞电子科技有限公司	2SC1815L-GR-T92-B	友顺 UTC	23+	TO-92	22560	原装正品，实单请联系	询价

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2SC2334中文资料
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找IC，尽在114IC

2SC181晶体管资料

2SC181产品属性

2SC181供应商更多...

2SC181芯片相关品牌

2SC181规格书下载地址

2SC181参数引脚图相关

2SC181数据表相关新闻

2SB857L-TO252R-D-TG_UTC代理商

2SC1815L-TO92K-Y-TG_UTC代理商

2SB857L-TO126CK-D-TG_UTC代理商

2SB834L-TO220FT-O-TG_UTC代理商

2SC2712G-SOT23.3R-Y-TG

2SC2334中文资料

DdatasheetPDF页码索引