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2SC1815晶体管资料
2SC1815别名：2SC1815三极管、2SC1815晶体管、2SC1815晶体三极管
2SC1815生产厂家：日本东芝公司
2SC1815制作材料：Si-NPN
2SC1815性质：通用型 （Uni）
2SC1815封装形式：直插封装
2SC1815极限工作电压：60V
2SC1815最大电流允许值：0.15A
2SC1815最大工作频率：>80MHZ
2SC1815引脚数：3
2SC1815最大耗散功率：0.4W
2SC1815放大倍数：
2SC1815图片代号：A-39
2SC1815vtest：60
2SC1815htest：80000100
- 2SC1815atest：0.15
2SC1815wtest：0.4
2SC1815代换 2SC1815用什么型号代替：BC174,BC182,BC184,BC190,BC384,BC414,BC546,DG458,DG1815,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC1815 | Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   |
2SC1815 | Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 ( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | NPN Transistor Features ● Power dissipation | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
2SC1815 | NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | |
2SC1815 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. | DCCOM Dc Components |  | |
2SC1815 | NPN EPITAXIAL PLANAR TRANSISTOR Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification. | TGS Tiger Electronic Co.,Ltd |  | |
2SC1815 | NPN SILICON TRANSISTOR
| MICRO-ELECTRONICS Micro Electronics |  | |
2SC1815 | Audio Frequency General Purpose Amplifier Applications Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Power dissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
2SC1815 | Silicon Epitaxial Planar Transistor FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
2SC1815 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | isc Silicon NPN Transistor DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SC1815 | NPN Epitaxial Planar Tansistor NPN Epitaxial Planar Tansistor | FCIFirst Components International 戈采戈采企业股份有限公司 |  | |
2SC1815 | Silicon Epitaxial Planar Transistor FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
2SC1815 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Power dissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | |
2SC1815 | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
2SC1815 | Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. Applications Audio frequency general purpose ,driver stage amplifier applications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
2SC1815 | NPN Transistors Features ● Power dissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
2SC1815 | SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
2SC1815 | Low Frequency Amplifier NPN Epitaxial Silicon Transistor 文件：891.61 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
2SC1815 | COLOR TELEVISION N1PS Chassis 文件：2.69679 Mbytes Page：54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | COLOR TELEVISION 文件：2.69679 Mbytes Page：54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | COLOUR TELEVISION C9PJ Chassis 文件：6.49885 Mbytes Page：126 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | Low Level and General Purpose Amplifiers 文件：84.74 Kbytes Page：1 Pages | MICRO-ELECTRONICS Micro Electronics | | |
2SC1815 | NPN Transistors 文件：987.55 Kbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | |
2SC1815 | Audio Frequency General Purpose Amplifier Applications 文件：279.37 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SC1815 | isc Silicon NPN Transistor 文件：235.34 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SC1815 | AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 文件：215.31 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
2SC1815 | Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications 文件：142.85 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 ( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking : | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. | DCCOM Dc Components | | | |
NPN SILICON TRANSISTOR
| MICRO-ELECTRONICS Micro Electronics | | | |
NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking : | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
NPN Transistors Features ● Power dissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
NPN Type Plastic Encapsulate Transistors FEATURES • Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
NPN Transistors Features ● Power dissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SOT-23 Plastic-Encapsulate Transistors (NPN) TRANSISTOR (NPN) FEATURES Power dissipation | TGS Tiger Electronic Co.,Ltd | | | |
NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 |  | | |
Audio Frequency General Purpose Amplifier Applications Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking : | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
NPN Transistor Epitaxial Planar Transistor Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
NPN Silicon Epitaxial Transistor Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking : | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 文件：165.79 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 文件：215.31 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
NPN Transistors 文件：987.55 Kbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
isc Silicon NPN Transistor 文件：235.34 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPN Epitaxial Planar Transistor 文件：839.81 Kbytes Page：2 Pages | FCIFirst Components International 戈采戈采企业股份有限公司 | | | |
NPN Silicon Epitaxial Transistor 文件：480.47 Kbytes Page：3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 文件：165.79 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
2SC1815产品属性
- 类型
描述
- 型号
2SC1815
- 制造商
Toshiba America Electronic Components
- 功能描述
TRANSISTOR NPN TO-92
- 制造商
TT Electronics/Semelab
- 功能描述
NPN transistor,2SC1815 0.15A Ic 6Vce
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TWGMC臺灣迪嘉 |
25+ |
SOT23 |
36000 |
TWGMC臺灣迪嘉原装现货2SC1815即刻询购立享优惠#长期有排单订 |
|||
CJ |
23+ |
NA |
30080 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
TOSHIBA |
24+ |
TO-92 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
TOSHIBA/东芝 |
24+ |
TO92 |
27083 |
大批量供应优势库存热卖 |
|||
TOSHIBA |
21+ |
SOT23 |
2860 |
绝对公司现货,不止网上数量!原装正品,假一赔十! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
2015+ |
54000 |
公司现货库存 |
|||||
TOSHIBA |
2021+ |
TO92 |
16800 |
全新原装正品,自家优势现货 |
|||
TOSHIBA/东芝 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
UTC(友顺) |
24+/25+ |
TO-92-3 |
1000 |
UTC原厂一级代理商,价格优势! |
2SC1815芯片相关品牌
2SC1815规格书下载地址
2SC1815参数引脚图相关
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2SC1815数据表相关新闻
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2SC2712G-SOT23.3R-Y-TG
2023-1-312SC2334中文资料
2SC2334中文资料
2019-2-18
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