2SC1815晶体管资料

  • 2SC1815别名:2SC1815三极管、2SC1815晶体管、2SC1815晶体三极管

  • 2SC1815生产厂家:日本东芝公司

  • 2SC1815制作材料:Si-NPN

  • 2SC1815性质:通用型 (Uni)

  • 2SC1815封装形式:直插封装

  • 2SC1815极限工作电压:60V

  • 2SC1815最大电流允许值:0.15A

  • 2SC1815最大工作频率:>80MHZ

  • 2SC1815引脚数:3

  • 2SC1815最大耗散功率:0.4W

  • 2SC1815放大倍数

  • 2SC1815图片代号:A-39

  • 2SC1815vtest:60

  • 2SC1815htest:80000100

  • 2SC1815atest:0.15

  • 2SC1815wtest:0.4

  • 2SC1815代换 2SC1815用什么型号代替:BC174,BC182,BC184,BC190,BC384,BC414,BC546,DG458,DG1815,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC1815

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

2SC1815

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

2SC1815

NPN Transistor

Features ● Power dissipation

KEXIN

科信电子

2SC1815

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

2SC1815

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

DCCOM

道全

2SC1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

TGS

2SC1815

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

2SC1815

Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

2SC1815

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

DGNJDZ

南晶电子

2SC1815

Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati

BILIN

银河微电

2SC1815

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

2SC1815

isc Silicon NPN Transistor

DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

ISC

无锡固电

2SC1815

NPN Epitaxial Planar Tansistor

NPN Epitaxial Planar Tansistor

FCI

富加宜

2SC1815

Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

LUGUANG

鲁光电子

2SC1815

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

JIANGSU

长电科技

2SC1815

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

KOOCHIN

灏展电子

2SC1815

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. Applications Audio frequency general purpose ,driver stage amplifier applications.

FOSHAN

蓝箭电子

2SC1815

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

2SC1815

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

2SC1815

COLOR TELEVISION N1PS Chassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

2SC1815

COLOR TELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

2SC1815

COLOUR TELEVISION C9PJ Chassis

文件:6.49885 Mbytes Page:126 Pages

TOSHIBA

东芝

2SC1815

Low Level and General Purpose Amplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

2SC1815

Bipolar Transistor

UTC

友顺

2SC1815

Audio Frequency General Purpose Amplifier Applications

文件:279.37 Kbytes Page:4 Pages

TOSHIBA

东芝

2SC1815

NPN Transistors

文件:987.55 Kbytes Page:2 Pages

KEXIN

科信电子

2SC1815

Low Frequency Amplifier NPN Epitaxial Silicon Transistor

文件:891.61 Kbytes Page:7 Pages

FUTUREWAFER

2SC1815

NPN TO-92 Plastic-Encapsulate Transistors

LXWIC

力芯微电子

2SC1815

小信号三极管

CHENDA

辰达半导体

2SC1815

isc Silicon NPN Transistor

文件:235.34 Kbytes Page:2 Pages

ISC

无锡固电

2SC1815

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

文件:215.31 Kbytes Page:4 Pages

UTC

友顺

2SC1815

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

文件:142.85 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

TOSHIBA

东芝

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

DCCOM

道全

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

SECOS

喜可士

TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

NPN Transistors

Features ● Power dissipation

YFWDIODE

佑风微

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

TGS

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

WINNERJOIN

永而佳

Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TOSHIBA

东芝

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

NPN Transistor Epitaxial Planar Transistor

Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.

SECOS

喜可士

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

MCC

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

Central

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

文件:165.79 Kbytes Page:4 Pages

UTC

友顺

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

文件:215.31 Kbytes Page:4 Pages

UTC

友顺

NPN Transistors

文件:987.55 Kbytes Page:2 Pages

KEXIN

科信电子

isc Silicon NPN Transistor

文件:235.34 Kbytes Page:2 Pages

ISC

无锡固电

NPN Epitaxial Planar Transistor

文件:839.81 Kbytes Page:2 Pages

FCI

富加宜

NPN Silicon Epitaxial Transistor

文件:480.47 Kbytes Page:3 Pages

MCC

2SC1815产品属性

  • 类型

    描述

  • 型号

    2SC1815

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANSISTOR NPN TO-92

  • 制造商

    TT Electronics/Semelab

  • 功能描述

    NPN transistor,2SC1815 0.15A Ic 6Vce

更新时间:2025-11-20 19:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC(友顺)
24+/25+
TO-92-3
1000
UTC原厂一级代理商,价格优势!
CJ
10+
SOT23
1000
原装现货价格有优势量大可以发货
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货2SC1815即刻询购立享优惠#长期有排单订
TOSHIBA
21+
SOT23
2860
绝对公司现货,不止网上数量!原装正品,假一赔十!
TOSHIBA
24+
TO-92
8540
只做原装正品现货或订货假一赔十!
长电
23+
TO-92
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
CJ/长晶
25+
SOT23
157463
明嘉莱只做原装正品现货
蓝箭
24+
SOT-23
33500
全新进口原装现货,假一罚十
Bychip/百域芯
21+
SOT-23
30000
实单必成 质强价优 可开13点增值税

2SC1815数据表相关新闻