NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

NPN Silicon Epitaxial Transistor

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Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

中等功率双极型晶体管

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

NPN Transistor

Features ● Power dissipation

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

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NPN Silicon Epitaxial Transistor

文件：480.47 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个