NPN Transistor Epitaxial Planar Transistor

Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.

NPN Transistor Epitaxial Planar Transistor

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

NPN Transistor

Features ● Power dissipation

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

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