Epitaxial Planar NPN Silicon Transistor

RF Amplifier Epitaxial Planar NPN Silicon Transistor

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High fT, low output capacitance, low base time constant and high gain, excellent noise characteristics. Applications FM radio RF amplifier applications.

SPECIFICATION TRANSISTORS,DIODES

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丝印代码：HF；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

NPN Epitaxial Planar Tansistor

NPN Epitaxial Planar Tansistor

isc Silicon NPN Transistor

DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

丝印代码：C1815；Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

丝印代码：C1815；Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

丝印代码：C1815；Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

丝印代码：C1815；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

丝印代码：HF；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

NPN Transistor

Features ● Power dissipation

NPN SILICON TRANSISTOR

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. Applications Audio frequency general purpose ,driver stage amplifier applications.

NPN Transistors

Features ● Power dissipation

Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

NPN SILICON TRANSISTOR

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

丝印代码：HF；NPN Transistors

Features ● Power dissipation

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

丝印代码：HFL；NPN Transistors

Features ● Power dissipation

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

NPN Transistor Epitaxial Planar Transistor

Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

SPECIFICATION TRANSISTORSS,DIODES

SPECIFICATION TRANSISTORSS / DIODES

RP POWER TRANSISTOR

2SC1817 is designed for HF and VHF Power Amplifier Applictions. Most useful for 12-Watt SSB citizens Band Transcever Output Stage.

Si NPN Triple Diffused Planar

Si NPN Triple Diffused Planar Color TV Chroma Output Features • High VCEO • Large collector dissipation

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Collector current :IC=4A • Collector power dissipation :PC=30W@TC=25°C APPLICATIONS • For use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Collector current :IC=4A • Collector power dissipation :PC=30W@TC=25°C APPLICATIONS • For use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA769 • Collector current :IC=4A • Collector dissipation :PC=30W@TC=25°C APPLICATIONS • For use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA769 • Collector current :IC=4A • Collector dissipation :PC=30W@TC=25℃ APPLICATIONS • For use in low frequency power amplifier applications

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=1A • Power dissipation –PC=40W @TC=25℃ APPLICATIONS • For power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=1A • Power dissipation –PC=40W @TC=25℃ APPLICATIONS • For power amplifier applications

Transistors AM FREQUENCY CONVERTER IF AMPLIFIER

[USHA] AM FREQUENCY CONVERTER IF AMPLIFIER • Current Gain Bandwidth Product fT = 100MHz(Typ) • Complement to KSA542

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1841 is designed for use in AF amplifier, driver and low speed switching.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1842 is designed for use in an AF amplifier and general purpose.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1843 is designed for use in an AF amplifier of low level low noise and general purpose.