| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 APPLICATIONS ·Designed for low frequency power amplifier applications. | ISC 无锡固电 |   | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：113.63 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：125.93 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAT |
23+ |
TO-220 |
13880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI/日立 |
24+ |
TO 3( ) |
158418 |
明嘉莱只做原装正品现货 |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
MAT |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
|||
NEC |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
ST |
2511 |
CAN to-39 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
MAT |
24+ |
NA/ |
26 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
25+ |
CAN to-39 |
16900 |
原装，请咨询 |
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2SB656A规格书下载地址
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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