位置：首页 > IC中文资料第1900页 > 2SB601-AZ-M
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-frequencypoweramplifierandlow-speedswitchingapplications | SAVANTIC Savantic, Inc. |  |   | |
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierandlow-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES •High-DCcurrentgainduetoDarlingtonconnection •Lowcollectorsaturationvoltage •Lowcollectorcutoffcurrent •IdealforuseindirectdrivefromICoutputfo | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@lc=-3A •Collector-EmitterSustainingVoltage- :VCEO(sus)=-100V(Min) •LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.5V(Max)@lc=-3A APPLICATIONS •Designedforuseinlow-frequencypoweramplifiersandlow-speeds | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
SiliconPNPPowerTransistors 文件：118.7 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | |
2SB601-AZ-M产品属性
- 类型
描述
- 型号
2SB601-AZ-M
- 制造商
Renesas Electronics
- 功能描述
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
328 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SEC |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
SEC |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
2024 |
TO-220 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
NSC |
24+ |
2927 |
|||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
NEC |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
恩XP |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
NEC |
22+ |
TO-220 |
20000 |
保证原装正品,假一陪十 |
2SB601-AZ-M芯片相关品牌
2SB601-AZ-M规格书下载地址
2SB601-AZ-M参数引脚图相关
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2SB601-AZ-M数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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