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2SB169晶体管资料
2SB169别名：2SB169三极管、2SB169晶体管、2SB169晶体三极管
2SB169生产厂家：日本富士通公司
2SB169制作材料：Ge-PNP
2SB169性质：低频或音频放大 （LF）
2SB169封装形式：直插封装
2SB169极限工作电压：9V
2SB169最大电流允许值：0.1A
2SB169最大工作频率：<1MHZ或未知
2SB169引脚数：3
2SB169最大耗散功率：0.15W
2SB169放大倍数：β=85
2SB169图片代号：C-47
2SB169vtest：9
2SB169htest：999900
- 2SB169atest：0.1
2SB169wtest：0.15
2SB169代换 2SB169用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,
2SB169价格
参考价格：￥0.7931
型号：2SB1690KT146 品牌：Rohm 备注：这里有2SB169多少钱，2025年最近7天走势，今日出价，今日竞价，2SB169批发/采购报价，2SB169行情走势销售排行榜，2SB169报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
General purpose amplification(-12V, -2A) Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver | ROHM 罗姆 |   | ||
General purpose amplification (-12V, -2A) Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat)≤ −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver | ROHM 罗姆 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit | RENESAS 瑞萨 | | ||
Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For general amplification ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing | Panasonic 松下 | | ||
General purpose amplification (-30V, -1A) Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦-380mV at IC=-500mA/IB=-25mA 3) Complements the 2SD2656. Application LOW FREQUENCY AMPLIFIER | ROHM 罗姆 | | ||
PNP Gneral Purpose Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain • High Collector Current • Low Collector-emitter Saturation Voltage • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free avail | MCC 美微科 | | ||
SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current ● Low Collector-emitter Saturation Voltage APPLICATIONS ● Low Frequency Amplifier Drive | JIANGSU 长电科技 | | ||
SOT-323 Plastic-Encapsulate Transistors FEATURES High DC Current Gain High Collector Current Low Collector-emitter Saturation Voltage APPLICATIONS Low Frequency Amplifier Drive | DGNJDZ 南晶电子 | | ||
Low frequency amplifier Features 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver | ROHM 罗姆 | | ||
Low frequency amplifier Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA Application Low frequency amplifier Driver | ROHM 罗姆 | | ||
Low Frequency Amplifier (-12V, -2A) Features Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) | ROHM 罗姆 | | ||
Low frequency amplifier Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver | ROHM 罗姆 | | ||
Low frequency amplifier Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver | ROHM 罗姆 | | ||
Low frequency amplifier Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver | ROHM 罗姆 | | ||
Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | Panasonic 松下 | | ||
General purpose amplification(−12V, −2A) 文件：75.55 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification(??2V, ??A) 文件：63.48 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification(??2V, ??A) 文件：63.48 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification(−12V, −2A) 文件：75.55 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
封装/外壳：SC-96 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 12V 2A TSMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier 文件：94.48 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier 文件：94.48 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier 文件：160.84 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier 文件：94.48 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier 文件：94.48 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 0.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PanasonicElectronicComponents | | ||
General purpose amplification (??0V, ??A) 文件：95.01 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification (−30V, −1A) 文件：76.16 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification (??0V, ??A) 文件：95.01 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
General purpose amplification (−30V, −1A) 文件：76.16 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：112.93 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：112.93 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：79.18 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：123.56 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：123.56 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Low frequency amplifier 文件：79.18 Kbytes Page：3 Pages | ROHM 罗姆 | |
2SB169产品属性
- 类型
描述
- 型号
2SB169
- 功能描述
两极晶体管 - BJT PNP 12V 2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
2023+ |
SOT-23 |
50000 |
原装现货 |
|||
ROHM/罗姆 |
2023+ |
SOT23 |
2100 |
十五年行业诚信经营,专注全新正品 |
|||
原装ROHM |
19+ |
SOT-23 |
20000 |
原装现货假一罚十 |
|||
ROHM |
24+ |
SOT23 |
5000 |
全现原装公司现货 |
|||
ROHM/罗姆 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
ROHM |
17PB |
SOT23 |
2300 |
现货 |
|||
ROHM |
2024 |
SOT23 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
ROHM/罗姆 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ROHM |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
TOSHIBA |
24+ |
SOT-23 |
6500 |
只做原装正品现货 欢迎来电查询15919825718 |
2SB169规格书下载地址
2SB169参数引脚图相关
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2SB169数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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DdatasheetPDF页码索引
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- P103
