2SB169晶体管资料

  • 2SB169别名:2SB169三极管、2SB169晶体管、2SB169晶体三极管

  • 2SB169生产厂家:日本富士通公司

  • 2SB169制作材料:Ge-PNP

  • 2SB169性质:低频或音频放大 (LF)

  • 2SB169封装形式:直插封装

  • 2SB169极限工作电压:9V

  • 2SB169最大电流允许值:0.1A

  • 2SB169最大工作频率:<1MHZ或未知

  • 2SB169引脚数:3

  • 2SB169最大耗散功率:0.15W

  • 2SB169放大倍数:β=85

  • 2SB169图片代号:C-47

  • 2SB169vtest:9

  • 2SB169htest:999900

  • 2SB169atest:0.1

  • 2SB169wtest:0.15

  • 2SB169代换 2SB169用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,

2SB169价格

参考价格:¥0.7931

型号:2SB1690KT146 品牌:Rohm 备注:这里有2SB169多少钱,2025年最近7天走势,今日出价,今日竞价,2SB169批发/采购报价,2SB169行情走势销售排行榜,2SB169报价。
型号 功能描述 生产厂家&企业 LOGO 操作

General purpose amplification(-12V, -2A)

Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver

ROHM

罗姆

General purpose amplification (-12V, -2A)

Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat)≤ −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver

ROHM

罗姆

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit

RENESAS

瑞萨

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For general amplification ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Panasonic

松下

General purpose amplification (-30V, -1A)

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦-380mV at IC=-500mA/IB=-25mA 3) Complements the 2SD2656. Application LOW FREQUENCY AMPLIFIER

ROHM

罗姆

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain • High Collector Current • Low Collector-emitter Saturation Voltage • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free avail

MCC

美微科

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current ● Low Collector-emitter Saturation Voltage APPLICATIONS ● Low Frequency Amplifier Drive

JIANGSU

长电科技

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Collector Current Low Collector-emitter Saturation Voltage APPLICATIONS Low Frequency Amplifier Drive

DGNJDZ

南晶电子

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA Application Low frequency amplifier Driver

ROHM

罗姆

Low Frequency Amplifier (-12V, -2A)

Features Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA)

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver

ROHM

罗姆

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Panasonic

松下

General purpose amplification(−12V, −2A)

文件:75.55 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification(??2V, ??A)

文件:63.48 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification(??2V, ??A)

文件:63.48 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification(−12V, −2A)

文件:75.55 Kbytes Page:3 Pages

ROHM

罗姆

封装/外壳:SC-96 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 12V 2A TSMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

文件:94.48 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

文件:94.48 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

文件:160.84 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

文件:94.48 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

文件:94.48 Kbytes Page:6 Pages

RENESAS

瑞萨

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 20V 0.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

General purpose amplification (??0V, ??A)

文件:95.01 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification (−30V, −1A)

文件:76.16 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification (??0V, ??A)

文件:95.01 Kbytes Page:3 Pages

ROHM

罗姆

General purpose amplification (−30V, −1A)

文件:76.16 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:112.93 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:112.93 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:79.18 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:123.56 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:123.56 Kbytes Page:3 Pages

ROHM

罗姆

Low frequency amplifier

文件:79.18 Kbytes Page:3 Pages

ROHM

罗姆

2SB169产品属性

  • 类型

    描述

  • 型号

    2SB169

  • 功能描述

    两极晶体管 - BJT PNP 12V 2A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-12 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2023+
SOT-23
50000
原装现货
ROHM/罗姆
2023+
SOT23
2100
十五年行业诚信经营,专注全新正品
原装ROHM
19+
SOT-23
20000
原装现货假一罚十
ROHM
24+
SOT23
5000
全现原装公司现货
ROHM/罗姆
24+
SOT-23
9600
原装现货,优势供应,支持实单!
ROHM
17PB
SOT23
2300
现货
ROHM
2024
SOT23
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
ROHM/罗姆
2511
SOT-23
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ROHM
24+
NA
3000
进口原装正品优势供应
TOSHIBA
24+
SOT-23
6500
只做原装正品现货 欢迎来电查询15919825718

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