| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 | NEC 瑞萨 | |||
isc Silicon PNP Power Transistor DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is idea | ISC 无锡固电 | |||
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 | NEC 瑞萨 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transi | ISC 无锡固电 | |||
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 | NEC 瑞萨 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+23+ |
TO263 |
33633 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
25+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
TO-220SMD |
8000 |
原装正品支持实单 |
|||
NEC |
24+ |
SOT-263 |
34000 |
||||
NEC |
2403+ |
TO263 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
NEC |
23+ |
TO-263 |
20000 |
原装正品,假一罚十 |
|||
NEC |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
|||
NEC |
最新 |
TO263 |
6598 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS |
24+ |
TO263 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
2SB1669IC芯片相关品牌
2SB1669IC规格书下载地址
2SB1669IC参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1705
- 2SB1700
- 2SB170
- 2SB1699
- 2SB1698
- 2SB1697
- 2SB1695
- 2SB1694
- 2SB1693
- 2SB1691
- 2SB1690
- 2SB1689
- 2SB1688
- 2SB1686
- 2SB1685
- 2SB1683
- 2SB1679
- 2SB1678-R(TX)
- 2SB1678-Q(TX)
- 2SB1678
- 2SB1677/2SD2619
- 2SB1677
- 2SB1676
- 2SB1675
- 2SB1674FU6
- 2SB1674
- 2SB1672S
- 2SB1672
- 2SB167
- 2SB1669-ZJ-E1
- 2SB1669-Z-E1IC
- 2SB1669-Z-E1-AZ
- 2SB1669Z-E1
- 2SB1669-Z-E1
- 2SB1669ZE1
- 2SB1669-Z
- 2SB1669-S
- 2SB1669-AZ
- 2SB16690ZE1
- 2SB1669(O)-Z-E1
- 2SB1669-(O)-Z-E1
- 2SB1669(O)ZE1
- 2SB1669(02)-Z-E1-AZ
- 2SB1669(02)-Z-E1-A2
- 2SB1669(02)-Z-E1
- 2SB1669(01)-Z-E1
- 2SB1669(0)-Z-E1-AZ
- 2SB1669(0)-Z-E1
- 2SB1669(0)-Z0E1
- 2SB1669
- 2SB1668
- 2SB1667-Y(T4LNSEIQ
- 2SB1667-Y(T4LDNSO)
- 2SB1667-Y(T4LCK
- 2SB1667-Y
- 2SB1667MOS
- 2SB1667E24L
- 2SB1667
- 2SB1664
- 2SB1659
- 2SB1658
- 2SB1657
- 2SB1655
- 2SB1653
- 2SB1649
- 2SB1648
- 2SB1647
- 2SB1645
- 2SB1643
- 2SB1642
- 2SB1641
- 2SB1640
- 2SB1639
- 2SB1638
- 2SB1631
2SB1669IC数据表相关新闻
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2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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