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2SB166晶体管资料
2SB166别名:2SB166三极管、2SB166晶体管、2SB166晶体三极管
2SB166生产厂家:日本日电公司
2SB166制作材料:Ge-PNP
2SB166性质:低频或音频放大 (LF)_输出极 (E)
2SB166封装形式:直插封装
2SB166极限工作电压:30V
2SB166最大电流允许值:0.1A
2SB166最大工作频率:<1MHZ或未知
2SB166引脚数:3
2SB166最大耗散功率:0.18W
2SB166放大倍数:β=100
2SB166图片代号:D-9
2SB166vtest:30
2SB166htest:999900
- 2SB166atest:0.1
2SB166wtest:0.18
2SB166代换 2SB166用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SCHOTTKYBARRIERDIODECHIPS DESCRIPTION ➤2SB166040MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | |||
LOWIRSCHOTTKYBARRIERDIODECHIPS DESCRIPTION ➤2SB166100MAisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Duetospecialschottkybarrierstructure,thechips haveverylowreverseleakagecurrent(typical IR=0.002mA@Vr=100V)andmaximum150°C opera | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | |||
PNPEpitaxialPlanarSiliconDarlingtonTransistorDriverApplications PNPEpitaxialPlanarSiliconDarlingtonTransistor Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS) AudioFrequencyPowerAmplifierApplications •Lowsaturationvoltage:VCE(sat)=−1.7V(max) (IC=−3A,IB=−0.3A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPTripleDiffusedType ■Features ●Lowsaturationvoltage ●AudioFrequencyPowerAmplifierApplications | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
ForPoweramplification(-100V,-8A) ForPoweramplification(−100V,−8A) Features 1)HighhFEbydarlingtonconnection. 2)Built-inresistorsbetweenbaseandemitter. 3)Damperdiodeisincorporated. Applications Relaydrive Motordrive | ROHMRohm 罗姆罗姆半导体集团 | |||
ForPoweramplification(100V,8A) PowerTransistor(100V,8A) Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1668. | ROHMRohm 罗姆罗姆半导体集团 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •HighDCcurrentamplifierrate hFE≥100@VCE=-5V,IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •The2SB1669-Zisapowertransistorthatcanbedirectlydriven fromtheoutputofanIC.Thistransistorisidea | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighDCcurrentamplifierratehFE≥100@VCE=-5V,IC=-0.5A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •The2SB1669-ZisapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.Thistransi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPTripleDiffusedType 文件:161.88 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyPowerAmplifierApplications 文件:178.29 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPTripleDiffusedType 文件:161.88 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyPowerAmplifierApplications 文件:178.29 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPTransistors 文件:1.35638 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.35638 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.35638 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
AudioFrequencyPowerAmplifierApplications 文件:178.29 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPTransistors 文件:1.35638 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SILICONPOWERTRANSISTOR 文件:262.029 Kbytes Page:8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |
2SB166产品属性
- 类型
描述
- 型号
2SB166
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
- 制造商
Renesas
- 功能描述
Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
RENESAS |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
12+ |
TO263 |
180 |
进口原装自己库存实库实数 |
|||
NEC |
23+ |
2800 |
正品原装货价格低 |
||||
NEC |
24+ |
TO263 |
54000 |
郑重承诺只做原装进口现货 |
|||
NEC |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
24+ |
TO263 |
9860 |
原装现货/放心购买 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
NEC |
1922+ |
TO263 |
6598 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NEC |
24+ |
NA/ |
6071 |
原装现货,当天可交货,原型号开票 |
2SB166规格书下载地址
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2SB166数据表相关新闻
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2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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