2SB166晶体管资料

  • 2SB166别名:2SB166三极管、2SB166晶体管、2SB166晶体三极管

  • 2SB166生产厂家:日本日电公司

  • 2SB166制作材料:Ge-PNP

  • 2SB166性质:低频或音频放大 (LF)_输出极 (E)

  • 2SB166封装形式:直插封装

  • 2SB166极限工作电压:30V

  • 2SB166最大电流允许值:0.1A

  • 2SB166最大工作频率:<1MHZ或未知

  • 2SB166引脚数:3

  • 2SB166最大耗散功率:0.18W

  • 2SB166放大倍数:β=100

  • 2SB166图片代号:D-9

  • 2SB166vtest:30

  • 2SB166htest:999900

  • 2SB166atest:0.1

  • 2SB166wtest:0.18

  • 2SB166代换 2SB166用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,

型号 功能描述 生产厂家 企业 LOGO 操作

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB166040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

SILAN

士兰微

LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB166100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera

SILAN

士兰微

PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

PNP Epitaxial Planar Silicon Darlington Transistor Features • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A)

TOSHIBA

东芝

Silicon PNP Triple Diffused Type

■ Features ● Low saturation voltage ● Audio Frequency Power Amplifier Applications

KEXIN

科信电子

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

For Power amplification (-100V, -8A)

For Power amplification (−100V, −8A) Features 1) High hFE by darlington connection. 2) Built-in resistors between base and emitter. 3) Damper diode is incorporated. Applications Relay drive Motor drive

ROHM

罗姆

For Power amplification (100V, 8A)

Power Transistor (100V, 8A) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is idea

ISC

无锡固电

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

RENESAS

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0

NEC

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transi

ISC

无锡固电

肖特基二极管芯片

SILAN

士兰微

PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

ONSEMI

安森美半导体

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

TOSHIBA

东芝

Silicon PNP Triple Diffused Type

文件:161.88 Kbytes Page:5 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier Applications

文件:178.29 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Triple Diffused Type

文件:161.88 Kbytes Page:5 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier Applications

文件:178.29 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP Transistors

文件:1.35638 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.35638 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.35638 Mbytes Page:3 Pages

KEXIN

科信电子

Audio Frequency Power Amplifier Applications

文件:178.29 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP Transistors

文件:1.35638 Mbytes Page:3 Pages

KEXIN

科信电子

SILICON POWER TRANSISTOR

文件:262.029 Kbytes Page:8 Pages

RENESAS

瑞萨

2SB166产品属性

  • 类型

    描述

  • 型号

    2SB166

  • 制造商

    Renesas Electronics

  • 功能描述

    Cut Tape

  • 制造商

    Renesas

  • 功能描述

    Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
6071
原装现货,当天可交货,原型号开票
NEC
25+
原装
32000
NEC全新特价2SB1669-Z-E1即刻询购立享优惠#长期有货
NEC
24+
TO263
880000
明嘉莱只做原装正品现货
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
TO263
9850
一级代理 原装正品假一罚十价格优势长期供货
NEC
25+23+
TO263
33633
绝对原装正品全新进口深圳现货
NEC
24+
TO-252
18200
新进库存/原装
NEC
22+
TO263
12245
现货,原厂原装假一罚十!
NEC
24+
TO263
54000
郑重承诺只做原装进口现货
NEC
24+
TO263
9600
原装现货,优势供应,支持实单!

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