| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1669-Z | iscSiliconNPNPowerTransistor DESCRIPTION •HighDCcurrentamplifierratehFE≥100@VCE=-5V,IC=-0.5A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •The2SB1669-ZisapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.Thistransi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
2SB1669-Z | PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | |
2SB1669-Z | SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
iscSiliconPNPPowerTransistor DESCRIPTION •HighDCcurrentamplifierrate hFE≥100@VCE=-5V,IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •The2SB1669-Zisapowertransistorthatcanbedirectlydriven fromtheoutputofanIC.Thistransistorisidea | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
6071 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
25+ |
原装 |
32000 |
NEC全新特价2SB1669-Z-E1即刻询购立享优惠#长期有货 |
|||
REN |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
NEC |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
RENESAS/瑞萨 |
23+ |
TO-TO-220 |
33500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
25+23+ |
TO263 |
33633 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
24+ |
TO-252 |
18200 |
新进库存/原装 |
2SB1669-Z芯片相关品牌
2SB1669-Z规格书下载地址
2SB1669-Z参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1705
- 2SB1700
- 2SB170
- 2SB1699
- 2SB1698
- 2SB1697
- 2SB1695
- 2SB1694
- 2SB1693
- 2SB1691_15
- 2SB1691_11
- 2SB1691
- 2SB1690K
- 2SB1690_1
- 2SB1690_05
- 2SB1690
- 2SB1689T106
- 2SB1689_13
- 2SB1689
- 2SB1688TZ-E
- 2SB1688
- 2SB1686
- 2SB1685
- 2SB1683
- 2SB1682
- 2SB1679
- 2SB1678
- 2SB1674
- 2SB1672
- 2SB1669-S
- 2SB1669_15
- 2SB1669
- 2SB1668
- 2SB1667-Y
- 2SB1667SM
- 2SB1667-O
- 2SB1667-GR
- 2SB1667_15
- 2SB1667_09
- 2SB1667_06
- 2SB1667
- 2SB1664
- 2SB166100MA
- 2SB166040ML
- 2SB1659
- 2SB1658_2014
- 2SB1658_15
- 2SB1658
- 2SB1657_2014
- 2SB1657
- 2SB1655
- 2SB1653
- 2SB1649
- 2SB1648
- 2SB1647
- 2SB1645
- 2SB1643
- 2SB1642
- 2SB1641
- 2SB1640
- 2SB1639
- 2SB1638
- 2SB1631
2SB1669-Z数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
