2SB165晶体管资料
2SB165别名:2SB165三极管、2SB165晶体管、2SB165晶体三极管
2SB165生产厂家:日本日电公司
2SB165制作材料:Ge-PNP
2SB165性质:低频或音频放大 (LF)_输出极 (E)
2SB165封装形式:直插封装
2SB165极限工作电压:30V
2SB165最大电流允许值:0.1A
2SB165最大工作频率:<1MHZ或未知
2SB165引脚数:3
2SB165最大耗散功率:0.125W
2SB165放大倍数:β=100
2SB165图片代号:D-9
2SB165vtest:30
2SB165htest:999900
- 2SB165atest:0.1
2SB165wtest:0.125
2SB165代换 2SB165用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX51A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP triple diffusion planar type(For power switching) Silicon PNP triple diffusion planar type For power switching ■ Features ● High collector to emitter VCEO ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping | Panasonic 松下 | |||
Power Transistor(-60V, -3A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2394 | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2394 | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2394 | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | JMNIC 锦美电子 | |||
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS SILICON TRANSISTOR FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) • High DC Current Gain hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A) | NEC 瑞萨 | |||
SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) · High DC Current Gain hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector t | RENESAS 瑞萨 | |||
SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A) | RENESAS 瑞萨 | |||
TO-126 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● High DC Current Gain | JIANGSU 长电科技 | |||
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A) | NEC 瑞萨 | |||
Silicon PNP Power Transistors DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications | ISC 无锡固电 | |||
PNP General Purpose Transistor FEATURES • High Current • Amplifier and Switching Applications | SECOS 喜可士 | |||
Silicon PNP transistor in a TO-126F Plastic Package Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low saturation voltage, high DC current gain Applications Audio frequency power amplifier and switching applications. | FOSHAN 蓝箭电子 | |||
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -5 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Silicon PNP Power Transistors 文件:206.79 Kbytes Page:3 Pages | SAVANTIC | |||
Driver Transistor | ROHM 罗姆 | |||
Silicon PNP Power Transistors 文件:151.23 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:151.23 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:102.64 Kbytes Page:3 Pages | SAVANTIC | |||
Transistor | RENESAS 瑞萨 | |||
Silicon PNP Power Transistors 文件:153.13 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:153.13 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:102.51 Kbytes Page:3 Pages | SAVANTIC | |||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | |||
Silicon PNP Power Transistors 文件:152.85 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:152.85 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) 文件:22.9 Kbytes Page:1 Pages | Sanken 三垦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
5400 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
25+ |
TO-126 |
860000 |
明嘉莱只做原装正品现货 |
|||
NEC |
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
|||
CJ/长电 |
25+ |
TO-252-2L |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
CJ |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
22+ |
TO220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
CJ/长电 |
21+ |
TO-126 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-126 |
24577 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
TO-126 |
50000 |
2SB165芯片相关品牌
2SB165规格书下载地址
2SB165参数引脚图相关
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2SB165数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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