AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

SILICON TRANSISTOR FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) • High DC Current Gain hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) · High DC Current Gain hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector t

Transistor

Silicon PNP Power Transistors

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Silicon PNP Power Transistors

文件：153.13 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：153.13 Kbytes Page：3 Pages