AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

SILICON TRANSISTOR FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) • High DC Current Gain hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) · High DC Current Gain hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector t

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

文件：102.64 Kbytes Page：3 Pages

Transistor

Silicon PNP Power Transistors

文件：153.13 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：153.13 Kbytes Page：3 Pages