AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A)

Silicon PNP Power Transistors

DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION ▪ With TO-126 package ▪ Low collector saturation voltage ▪ High DC current gain APPLICATIONS • For audio frequency amplifier and switching applications

PNP General Purpose Transistor

FEATURES • High Current • Amplifier and Switching Applications

Silicon PNP transistor in a TO-126F Plastic Package

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low saturation voltage, high DC current gain Applications Audio frequency power amplifier and switching applications.

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -5 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● High DC Current Gain

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A)

TO-126双极型晶体管

普通三极管

晶体管

Silicon PNP Power Transistors

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Silicon PNP Power Transistors

文件：152.85 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：152.85 Kbytes Page：3 Pages