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2SB156晶体管资料

2SB156(H)别名：2SB156(H)三极管、2SB156(H)晶体管、2SB156(H)晶体三极管
2SB156(H)生产厂家：日本日立公司
2SB156(H)制作材料：Ge-PNP
2SB156(H)性质：低频或音频放大（LF）_TR_输出极（E）
2SB156(H)封装形式：直插封装
2SB156(H)极限工作电压：16V
2SB156(H)最大电流允许值：0.3A
2SB156(H)最大工作频率：<1MHZ或未知
2SB156(H)引脚数：3
2SB156(H)最大耗散功率：0.15W
2SB156(H)放大倍数：
2SB156(H)图片代号：C-78
2SB156(H)vtest：16
2SB156(H)htest：999900
2SB156(H)atest：0.3
2SB156(H)wtest：0.15

2SB156(H)代换 2SB156(H)用什么型号代替：AC128,AC153,AC188,2N1189,2N1190,2SB405,2SB475,3AX53A,

2SB156价格

参考价格：￥10.4105

型号：2SB1560 品牌：Sanken 备注：这里有2SB156多少钱，2025年最近7天走势，今日出价，今日竞价，2SB156批发/采购报价，2SB156行情走势销售排行榜，2SB156报价。

型号	功能描述	生产厂家企业	LOGO
2SB156	GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT 文件：43.75 Kbytes Page：1 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1560	Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose	Sanken 三垦	Sanken
2SB1560	isc Silicon PNP Darlington Power Transistor DESCRIPTION • With TO-3PN package • Complement to type 2SD2390 APPLICATIONS • Audio ,regulator and general purpose	ISC 无锡固电	ISC
2SB1560	Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD2390 APPLICATIONS • Audio ,regulator and general purpose	JMNIC 锦美电子	JMNIC
2SB1560	Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD2390 APPLICATIONS • Audio ,regulator and general purpose	SAVANTIC	SAVANTIC
2SB1561	Medium Power Transistor (-60V, -2A) Features 1) Low saturation voltage , typically VCE (sat)= −0.15V at IC/ IB= −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SD2391.	ROHM 罗姆	ROHM
2SB1561U	medium power transistor PNP Silicon Epitaxial Planar Transistor Medium Power Transistor	Surge	Surge
2SB1562	isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain-: hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage-: VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB= -20mA) APPLICATIONS ·Designed for power amplifier applications	ISC 无锡固电	ISC
2SB1565	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2394	ISC 无锡固电	ISC
2SB1565	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1565	Power Transistor(-60V, -3A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1565	Power Transistor (-60V, -3A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1565	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2394	SAVANTIC	SAVANTIC
2SB1565	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2394	JMNIC 锦美电子	JMNIC
2SB1566	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Excellent DC current gain characteristics • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SD2395	SAVANTIC	SAVANTIC
2SB1566	For Power Amplification (-60V, -3A) 2SB1566 Power Transistor(-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB = -2A / -0.2A 2) Wide SOA (safe operating area). 3) Complements the 2SD2395. 2SD2395 Power Transistor(50V, 3A) Features 1) Low saturation voltage, typically VCE(sat) = 0.2V at	ROHM 罗姆	ROHM
2SB1566	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1566	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395	JMNIC 锦美电子	JMNIC
2SB1566	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395	ISC 无锡固电	ISC
2SB1567	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min) ·High DC Current Gain-: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS ·Designed for high power switching applications.	ISC 无锡固电	ISC
2SB1567	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1567	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications	SAVANTIC	SAVANTIC
2SB1567	Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min) ·High DC Current Gain-: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS ·Designed for high power switching applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1568	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -2V, lc= -1A) • Complement to Type 2SD2398 APPLICATIONS • Designed for high power switching applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1568	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2399 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • For power amplifier applications	SAVANTIC	SAVANTIC
2SB1568	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1568	Power Transistor (-80V, -4A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1568	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2399 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • For power amplifier applications	ISC 无锡固电	ISC
2SB1569	isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Complement to Type 2SD2400 APPLICATIONS • Designed for power amplifier applications.	ISC 无锡固电	ISC
2SB1569	POWER TRANSISTOR Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1569	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1569	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High DC current gain • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2400	SAVANTIC	SAVANTIC
2SB1569	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -2V, lc= -1A) • Complement to Type 2SD2398 APPLICATIONS • Designed for high power switching applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1569A	POWER TRANSISTOR Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1569A	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1560	Silicon PNP Epitaxial Planar Transistor 文件：35.64 Kbytes Page：1 Pages	Sanken 三垦	Sanken
2SB1560	Silicon PNP Darlington Power Transistors 文件：172.79 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1560	Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P	ETC 知名厂家	ETC
2SB1560_07	Silicon PNP Epitaxial Planar Transistor 文件：35.17 Kbytes Page：1 Pages	Sanken 三垦	Sanken
2SB1560_15	Silicon PNP Darlington Power Transistors 文件：191.87 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1560_2014	Silicon PNP Darlington Power Transistors 文件：191.87 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1561	Medium Power Transistor (−60V, −2A) 文件：175.55 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1561	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM 罗姆	ROHM
2SB1561_09	Medium Power Transistor (−60V, −2A) 文件：175.55 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1561-Q	PNP Transistors 文件：334.45 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1561SQ	PNP Transistor 文件：359.6 Kbytes Page：3 Pages	PJSEMI 平晶半导体	PJSEMI
2SB1561T100	PNP Driver Transistor	ROHM 罗姆	ROHM
2SB1561T100Q	封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 60V 2A MPT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SB1565	Silicon PNP transistor in a TO-220F Plastic Package. 文件：744.72 Kbytes Page：5 Pages	FOSHAN 蓝箭电子	FOSHAN
2SB1565	Silicon PNP Power Transistor 文件：132.64 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1565	Silicon PNP Power Transistors 文件：210.45 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1565_15	Silicon PNP Power Transistors 文件：158.9 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1565_2014	Silicon PNP Power Transistors 文件：158.9 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1565FU6E	封装/外壳：TO-220-3 整包包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 60V 3A TO220FN 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SB1566	Silicon PNP transistor in a TO-220F Plastic Package. 文件：750.05 Kbytes Page：5 Pages	FOSHAN 蓝箭电子	FOSHAN
2SB1566	Silicon PNP Power Transistors 文件：210.11 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1566	Silicon PNP Power Transistor 文件：75.34 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1566_15	Silicon PNP Power Transistors 文件：159.25 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1566_2014	Silicon PNP Power Transistors 文件：159.25 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1567	Silicon PNP Power Transistors 文件：206.25 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

2SB156产品属性

类型
描述
型号
2SB156
制造商
Sanken Electric Co Ltd
功能描述
Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Box
制造商
Sanken Electric Co Ltd
功能描述
Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Bulk
制造商
Sanken Electric Co Ltd
功能描述
TRANS PNP AUDIO/GP MT-100 TO-3P
制造商
Allegro MicroSystems
功能描述
DARLINGTON TRANSISTOR TO-3P
制造商
Allegro MicroSystems
功能描述
DARLINGTON TRANSISTOR, TO-3P
制造商
Allegro MicroSystems
功能描述
TRANSISTOR,BJT,DARLINGTON,PNP,150V V(BR)CEO,10A I(C)

2SB156供应商更多...

更新时间：2025-12-25 13:47:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	2SB1561T100Q	ROHM/罗姆	2450+	SOT-89	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市坤融电子科技有限公司	2SB1561	ROHM/罗姆	2025+	SOT-89	5000	原装进口价格优请找坤融电子!	询价
深圳市亿智腾科技有限公司	2SB156	NEC	24+	CAN3	6540	原装现货/欢迎来电咨询	询价
深圳市博中泰实业有限公司	2SB1568	ROHM/罗姆	24+	TO-220F	60000		询价
深圳市弘为电子有限公司	2SB1561	ROHM	24+	原厂封装	2500	原装现货假一罚十	询价
深圳市宇创芯科技有限公司	2SB1561T100Q	ROHM/罗姆	24+	SOT-89	9600	原装现货,优势供应,支持实单!	询价
深圳市东来宝电子科技有限公司	2SB1561T100Q	ROHM/罗姆	24+	SOT89	37279	郑重承诺只做原装进口现货	询价
深圳市向鸿伟业电子有限公司	2SB1561T100Q	ROHM/罗姆	2402+	SOT89	8324	原装正品!实单价优!	询价
深圳市斌腾达科技有限公司	2SB1561	ROHM	21+	SOT-89	21000	一级代理进口原装!长期供应!绝对优势价格(诚信经营	询价
上海磐岳电子有限公司	2SB1561	ROHM	2023+	SOT-89	58000	进口原装,现货热卖	询价

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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2SB156晶体管资料

2SB156价格

2SB156产品属性

2SB156供应商更多...

2SB156芯片相关品牌

2SB156规格书下载地址

2SB156参数引脚图相关

2SB156数据表相关新闻

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2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引