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2SB156晶体管资料
2SB156(H)别名:2SB156(H)三极管、2SB156(H)晶体管、2SB156(H)晶体三极管
2SB156(H)生产厂家:日本日立公司
2SB156(H)制作材料:Ge-PNP
2SB156(H)性质:低频或音频放大 (LF)_TR_输出极 (E)
2SB156(H)封装形式:直插封装
2SB156(H)极限工作电压:16V
2SB156(H)最大电流允许值:0.3A
2SB156(H)最大工作频率:<1MHZ或未知
2SB156(H)引脚数:3
2SB156(H)最大耗散功率:0.15W
2SB156(H)放大倍数:
2SB156(H)图片代号:C-78
2SB156(H)vtest:16
2SB156(H)htest:999900
- 2SB156(H)atest:0.3
2SB156(H)wtest:0.15
2SB156(H)代换 2SB156(H)用什么型号代替:AC128,AC153,AC188,2N1189,2N1190,2SB405,2SB475,3AX53A,
2SB156价格
参考价格:¥10.4105
型号:2SB1560 品牌:Sanken 备注:这里有2SB156多少钱,2025年最近7天走势,今日出价,今日竞价,2SB156批发/采购报价,2SB156行情走势销售排行榜,2SB156报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconPNPEpitaxialPlanarTransistor(Audio,SeriesRegulatorandGeneralPurpose) SiliconPNPEpitaxialPlanarTransistor(Complementtotype2SD2390) Application:Audio,SeriesRegulatorandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD2390 APPLICATIONS •Audio,regulatorandgeneralpurpose | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD2390 APPLICATIONS •Audio,regulatorandgeneralpurpose | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD2390 APPLICATIONS •Audio,regulatorandgeneralpurpose | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MediumPowerTransistor(-60V,-2A) Features 1)Lowsaturationvoltage,typicallyVCE(sat)=−0.15VatIC/IB=−1A/−50mA. 2)Collector-emittervoltage=−60V 3)Pc=2W(on40400.7mmceramicboard). 4)Complementsthe2SD2391. | ROHMRohm 罗姆罗姆半导体集团 | |||
mediumpowertransistor PNPSiliconEpitaxialPlanarTransistor MediumPowerTransistor | Surge Surge Components | |||
iscSiliconPNPPowerTransistor DESCRIPTION ·HighDCCurrentGain-:hFE=300~1000@(VCE=-5V,IC=-0.5A) ·LowSaturationVoltage-:VCE(sat)=-0.5V(TYP.)@(IC=-2A,IB=-20mA) APPLICATIONS ·Designedforpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerTransistor(-60V,-3A) EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
PowerTransistor(-60V,-3A) EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·ExcellentDCcurrentgaincharacteristics ·Lowcollectorsaturationvoltage ·WideSOA(safeoperatingarea) ·Complementtotype2SD2394 | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •ExcellentDCcurrentgaincharacteristics •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SD2394 | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·ExcellentDCcurrentgaincharacteristics ·Lowcollectorsaturationvoltage ·WideSOA(safeoperatingarea) ·Complementtotype2SD2394 | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·ExcellentDCcurrentgaincharacteristics ·Lowcollectorsaturationvoltage ·WideSOA(safeoperatingarea) ·Complementtotype2SD2395 | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·ExcellentDCcurrentgaincharacteristics ·Lowcollectorsaturationvoltage ·WideSOA(safeoperatingarea) ·Complementtotype2SD2395 | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ForPowerAmplification(-60V,-3A) 2SB1566 PowerTransistor(-50V,-3A) Features 1)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-2A/-0.2A 2)WideSOA(safeoperatingarea). 3)Complementsthe2SD2395. 2SD2395 PowerTransistor(50V,3A) Features 1)Lowsaturationvoltage,typicallyVCE(sat)=0.2Vat | ROHMRohm 罗姆罗姆半导体集团 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •ExcellentDCcurrentgaincharacteristics •Lowcollectorsaturationvoltage •WideSOA(safeoperatingarea) •Complementtotype2SD2395 | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain-:hFE=1000(Min)@(VCE=-2V,IC=-1A) ·ComplementtoType2SD2398 APPLICATIONS ·Designedforhighpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain-:hFE=1000(Min)@(VCE=-2V,IC=-1A) ·ComplementtoType2SD2398 APPLICATIONS ·Designedforhighpowerswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SD2398 ·HighDCcurrentgain. ·DARLINGTON APPLICATIONS ·Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-2V,lc=-1A) •ComplementtoType2SD2398 APPLICATIONS •Designedforhighpowerswitchingapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2399 •HighDCcurrentgain. •Lowsaturationvoltage. •DARLINGTON APPLICATIONS •Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2399 •HighDCcurrentgain. •Lowsaturationvoltage. •DARLINGTON APPLICATIONS •Forpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
PowerTransistor(-80V,-4A) EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
POWERTRANSISTOR EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain •Lowcollectorsaturationvoltage •Wideareaofsafeoperation •Complementtotype2SD2400 | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •ComplementtoType2SD2400 APPLICATIONS •Designedforpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-2V,lc=-1A) •ComplementtoType2SD2398 APPLICATIONS •Designedforhighpowerswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
POWERTRANSISTOR EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35.64 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconPNPDarlingtonPowerTransistors 文件:172.79 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35.17 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconPNPDarlingtonPowerTransistors 文件:191.87 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistors 文件:191.87 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
MediumPowerTransistor(−60V,−2A) 文件:175.55 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(−60V,−2A) 文件:175.55 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
PNPTransistors 文件:334.45 Kbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistor 文件:359.6 Kbytes Page:3 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | |||
封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
SiliconPNPPowerTransistor 文件:132.64 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:210.45 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPtransistorinaTO-220FPlasticPackage. 文件:744.72 Kbytes Page:5 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconPNPPowerTransistors 文件:158.9 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:158.9 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 3A TO220FN 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
SiliconPNPPowerTransistors 文件:210.11 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPtransistorinaTO-220FPlasticPackage. 文件:750.05 Kbytes Page:5 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconPNPPowerTransistor 文件:75.34 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:159.25 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:159.25 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:206.25 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:207.73 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
TO-220FPlastic-EncapsulateTransistors 文件:1.41387 Mbytes Page:3 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SiliconPNPPowerTransistors 文件:209.46 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. |
2SB156产品属性
- 类型
描述
- 型号
2SB156
- 制造商
Sanken Electric Co Ltd
- 功能描述
Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Box
- 制造商
Sanken Electric Co Ltd
- 功能描述
Trans Darlington PNP 150V 10A 3-Pin(3+Tab) TO-3P Bulk
- 制造商
Sanken Electric Co Ltd
- 功能描述
TRANS PNP AUDIO/GP MT-100 TO-3P
- 制造商
Allegro MicroSystems
- 功能描述
DARLINGTON TRANSISTOR TO-3P
- 制造商
Allegro MicroSystems
- 功能描述
DARLINGTON TRANSISTOR, TO-3P
- 制造商
Allegro MicroSystems
- 功能描述
TRANSISTOR,BJT,DARLINGTON,PNP,150V V(BR)CEO,10A I(C)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANKEN |
24+ |
TO247 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
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SANKEN |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SANKEN |
25+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
|||
SANKEN |
24+ |
10 |
|||||
SANKEN/三垦 |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
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SANKEN |
22+ |
TO247 |
14297 |
原装正品现货 |
|||
NA |
19+ |
59198 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
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SANKEN |
17+ |
TO247 |
6200 |
100%原装正品现货 |
|||
SANKEN |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
PANASONIC/松下 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
2SB156规格书下载地址
2SB156参数引脚图相关
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2SB156数据表相关新闻
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支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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