2SB1569晶体管资料
2SB1569别名：2SB1569三极管、2SB1569晶体管、2SB1569晶体三极管
2SB1569生产厂家：TOY
2SB1569制作材料：Si-PNP
2SB1569性质：低频或音频放大 （LF）_功率放大 （L）
2SB1569封装形式：直插封装
2SB1569极限工作电压：120V
2SB1569最大电流允许值：1.5A
2SB1569最大工作频率：50MHZ
2SB1569引脚数：3
2SB1569最大耗散功率：20W
2SB1569放大倍数：
2SB1569图片代号：B-10
2SB1569vtest：120
2SB1569htest：50000000
- 2SB1569atest：1.5
2SB1569wtest：20
2SB1569代换 2SB1569用什么型号代替：2SA1332,2SA1393,2SB1186,2SB1186A,2SB1159,2SA1859AKSA1304,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1569 | POWER TRANSISTOR Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 |   | |
2SB1569 | 丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | |
2SB1569 | isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Complement to Type 2SD2400 APPLICATIONS • Designed for power amplifier applications. | ISC 无锡固电 | | |
2SB1569 | Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -2V, lc= -1A) • Complement to Type 2SD2398 APPLICATIONS • Designed for high power switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB1569 | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High DC current gain • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2400 | SAVANTIC | | |
2SB1569 | Silicon PNP Power Transistors 文件：209.46 Kbytes Page：3 Pages | SAVANTIC | | |
2SB1569 | Trans GP BJT PNP 60V 2A 4-Pin(3+Tab) MPT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Driver Transistor 为支持现有客户而生产的产品。不对新设计出售此产品。 | ROHM 罗姆 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
POWER TRANSISTOR Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | |
2SB1569产品属性
- 类型
描述
- Maximum Transition Frequency：
200(Typ)MHz
- Maximum Power Dissipation：
2000mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
6V
- Maximum DC Collector Current：
2A
- Maximum Collector Emitter Voltage：
60V
- Maximum Collector Emitter Saturation Voltage：
0.35@50mA@1AV
- Maximum Collector Base Voltage：
60V
- Configuration：
Single Dual Collector
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2026+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
24+ |
TO-220F |
10000 |
全新 |
||||
ROHM/罗姆 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
ROHM/罗姆 |
23+ |
TO-220F |
28888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ROHM/罗姆 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
24+ |
TO-220F |
5000 |
全现原装公司现货 |
|||
ROHM/罗姆 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
|||
ROHM |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
2SB1569芯片相关品牌
2SB1569规格书下载地址
2SB1569参数引脚图相关
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2SB1569数据表相关新闻
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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