TRANSISTOR (SWITCHING APPLICATIONS)

Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) B ·Complement to Type 2SD2241 APPLICATIONS ·H

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA) • Complement to Type 2SD2241 APPLICATIONS • High power switching

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

Silicon PNP triple diffusion planer type(For power switching)

Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057

Silicon PNP Power Transistors

文件：215.26 Kbytes Page：3 Pages

Silicon PNP Epitaxial Type

文件：137.89 Kbytes Page：4 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 100V 4A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Epitaxial Type

文件：137.89 Kbytes Page：4 Pages

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes Page：2 Pages

TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

Transistor-Bipolar Small Signal Transistors

Transistor-Bipolar Small Signal Transistors

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 400V 0.5A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个