PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation A

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -3mA) APPLICATIONS • Designed for low-frequency power amplifiers and lo

SILICON POWER TRANSISTOR

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