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2SB1431晶体管资料
2SB1431别名：2SB1431三极管、2SB1431晶体管、2SB1431晶体三极管
2SB1431生产厂家：日本日电公司
2SB1431制作材料：Si-P+Darl+Di
2SB1431性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB1431封装形式：直插封装
2SB1431极限工作电压：100V
2SB1431最大电流允许值：8A
2SB1431最大工作频率：<1MHZ或未知
2SB1431引脚数：3
2SB1431最大耗散功率：25W
2SB1431放大倍数：β>2000
2SB1431图片代号：B-38
2SB1431vtest：100
2SB1431htest：999900
- 2SB1431atest：8
2SB1431wtest：25
2SB1431代换 2SB1431用什么型号代替：2SB913,2SB1020,2SB1099,2SB1228,2SB1255,2SB1283,2SB1344,2SB1391,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1431 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm | NEC 瑞萨 |   | |
2SB1431 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation A | ISC 无锡固电 | | |
2SB1431 | Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -3mA) APPLICATIONS • Designed for low-frequency power amplifiers and lo | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2SB1431 | SILICON POWER TRANSISTOR 文件：257.73 Kbytes Page：8 Pages | RENESAS 瑞萨 | | |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING 文件：257.73 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
2SB1431产品属性
- 类型
描述
- 型号
2SB1431
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
PNP PWR Transistor,100V,8.0A,isoTO-220
- 制造商
Renesas
- 功能描述
Trans Darlington PNP 100V 8A 3-Pin(3+Tab) TO-220 Isolated
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO220 |
35890 |
||||
TOSHIBA |
24+ |
90000 |
|||||
NEC |
23+ |
TO-220F |
688888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
NEC |
24+ |
TO-220F |
43200 |
郑重承诺只做原装进口现货 |
|||
NEC |
2014+ |
196 |
公司现货库存 |
||||
NEC |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
2SB1431芯片相关品牌
2SB1431规格书下载地址
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2SB1431数据表相关新闻
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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