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2SB139晶体管资料
2SB1390别名：2SB1390三极管、2SB1390晶体管、2SB1390晶体三极管
2SB1390生产厂家：日本日立公司
2SB1390制作材料：Si-P+Darl+Di
2SB1390性质：绝缘 （Iso）
2SB1390封装形式：直插封装
2SB1390极限工作电压：60V
2SB1390最大电流允许值：8A
2SB1390最大工作频率：<1MHZ或未知
2SB1390引脚数：3
2SB1390最大耗散功率：25W
2SB1390放大倍数：β>1000
2SB1390图片代号：B-45
2SB1390vtest：60
2SB1390htest：999900
- 2SB1390atest：8
2SB1390wtest：25
2SB1390代换 2SB1390用什么型号代替：BD646F,BDT62F,2SA1719,2SB1021,2SB1022,2SB1099,2SB1224,2SB1344,
2SB139价格
参考价格：￥2.3058
型号：2SB13980PA 品牌：Panasonic 备注：这里有2SB139多少钱，2025年最近7天走势，今日出价，今日竞价，2SB139批发/采购报价，2SB139行情走势销售排行榜，2SB139报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Triple Diffused Application Low frequency power amplifier | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | | ||
SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ► 2SB139040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ► Low power losses, high efficiency; ► Guard ring construction for transient protection; ► High ESD capability; ► High surge capability; ► Packaged products are widely use | SILAN 士兰微 | | ||
SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ► 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ► Low power losses, high efficiency; ► Guard ring construction for transient protection; ► High ESD capability; ► High surge capability; ► Packaged products are widely use | SILAN 士兰微 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power switching applications | ISC 无锡固电 | | ||
Silicon PNP Triple Diffused Application Power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB139100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera | SILAN 士兰微 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For low frequency power amplifier applications | SAVANTIC | | ||
Silicon PNP Triple Diffused Application Low frequency power amplifier | HitachiHitachi Semiconductor 日立日立公司 | | ||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) • Good Linearity of hFE APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A ■ Features ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | SAVANTIC | | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A ■ Features ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Satisfactory linearity of hFE • Low collector to emitter saturation voltage • Complement to type 2SD1985/1985A APPLICATIONS • For power amplification | JMNIC 锦美电子 | | ||
PNP/NPN Epitaxial Planar Silicon Transistors Features ● Contains input resistance (R1), base-to-emitter resistance (RBE). ● Contains diode between collector and emitter. ● Low saturation voltage. ● Large current capacity. ● Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. | KEXIN 科信电子 | | ||
Compact Motor Driver Applications? Compact Motor Driver Applications Features · Contains input resistance (R1), base-to-emitter resistance (RBE). · Contains diode between collector and emitter. · Low saturation voltage. · Large current capacity. · Small-sized package making it easy to provide high density, small | SANYO 三洋 | | ||
DC-DC Converter,Motor Driver Applications? DC-DC Converter, Motor Driver Application | SANYO 三洋 | | ||
DC-DC Converter,Motor Driver Applications??? PNP Epitaxial Planar Silicon Transistor DC-DC Converter, Motor Driver Applications | SANYO 三洋 | | ||
PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET,MBIT processes • Large current capacity • Low collector to emitter saturation voltage | KEXIN 科信电子 | | ||
Compact Motor Driver Applications??? Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacity. • Small-sized package making it easy to provide high density, small-sized hybrid ICs. | SANYO 三洋 | | ||
Silicon PNP epitaxial planer type(For low-frequency output amplification) Silicon PNP epitaxial planer type For low-frequency output amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector current IC. ● Allowing supply with the radial taping. | Panasonic 松下 | | ||
Silicon PNP Triple Diffused Application Low frequency power amplifier | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Triple Diffused 文件：150.35 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Power Transistors 文件：131.66 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：130.38 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Triple Diffused 文件：150.11 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Triple Diffused 文件：145.85 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Power Transistors 文件：123.99 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistor 文件：128.3 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor 文件：129.169 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：140.32 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon PNP epitaxial planar type(For power amplification) | Panasonic 松下 | | ||
Silicon PNP Power Transistors 文件：199.1 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：199.1 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP epitaxial planar type | Panasonic 松下 | | ||
Silicon PNP Power Transistors 文件：200.72 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：200.72 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
PNP Transistors 文件：1.15165 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.05979 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.05979 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.05979 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.05979 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Epitaxial Planar Silicon Transistors 文件：52 Kbytes Page：1 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.11624 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 25V 5A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | | ||
封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 25V 5A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | | ||
Transistors>Switching/Bipolar | RENESAS 瑞萨 | | ||
Silicon PNP Triple Diffused 文件：150.89 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
2SB139产品属性
- 类型
描述
- 型号
2SB139
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
日立 |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO/三洋 |
23+ |
TO-92 |
988888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
恩XP |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ROHM |
24+ |
30000 |
|||||
HITACHI/日立 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
HITACHI/日立 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HITACHI/日立 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
KEC |
16+ |
TO-220 |
100000 |
全新原装现货 |
|||
HITACHI |
24+ |
TO-251 |
30000 |
只做正品原装现货 |
|||
NEC |
24+ |
CAN4 |
6540 |
原装现货/欢迎来电咨询 |
2SB139芯片相关品牌
2SB139规格书下载地址
2SB139参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 4735
- 47301
- 4591
- 4536
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- 3g汽车
- 3579
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- 2SB1406
- 2SB1405
- 2SB1404
- 2SB1403
- 2SB1402
- 2SB1401
- 2SB1400
- 2SB140
- 2SB14
- 2SB1399
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- 2SB1397
- 2SB1396
- 2SB1395
- 2SB1394
- 2SB1393A
- 2SB1393
- 2SB1392
- 2SB1391
- 2SB1390
- 2SB138A,B
- 2SB1389
- 2SB1388
- 2SB1387
- 2SB1386
- 2SB1384
- 2SB1383
- 2SB1382
- 2SB1381
- 2SB138
- 2SB1378Q...S
- 2SB1378
- 2SB1377Q...S
- 2SB1377
- 2SB1376Q...S
- 2SB1376
- 2SB1375
- 2SB1374
- 2SB1373
- 2SB1372
- 2SB1371
- 2SB1370
- 2SB1369
- 2SB1368
- 2SB1367
- 2SB1366
- 2SB1362
2SB139数据表相关新闻
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2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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