LOW FREQUENCY PNP TRANSISTOR

■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

Epitaxial Planar Transistor PNP Silicon

Epitaxial Planar Transistor PNP Silicon

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

Low Frequency Transistor

Features ● Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) ● Excellent DC current gain ● Epitaxial planar type ● PNP silicon transistor

Low frequency transistor (−20V, −5A)

文件：139.65 Kbytes Page：5 Pages

PNP Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .

PNP Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Strobe Flash

PNP Transistor

PNP Epitaxial Transistor

PNP Epitaxial Transistor