2SB134晶体管资料
2SB134别名：2SB134三极管、2SB134晶体管、2SB134晶体三极管
2SB134生产厂家：日本三菱公司
2SB134制作材料：Ge-PNP
2SB134性质：低频或音频放大 （LF）_低噪放大 （ra）
2SB134封装形式：直插封装
2SB134极限工作电压：30V
2SB134最大电流允许值：0.1A
2SB134最大工作频率：<1MHZ或未知
2SB134引脚数：3
2SB134最大耗散功率：0.1W
2SB134放大倍数：
2SB134图片代号：C-47
2SB134vtest：30
2SB134htest：999900
- 2SB134atest：0.1
2SB134wtest：0.1
2SB134代换 2SB134用什么型号代替：AC125,AC126,AC151R,AC191,ACY32,2SB173,3AX51B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Transistor (120V, -6A) Medium Power Transistor +/-120V/ +/- 6A | ROHM 罗姆 |   | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) • Complement to Type 2SD1889 APPLICATIONS • Designed for power amplifier applications. | ISC 无锡固电 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS • Designed for power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS • Designed for power amplifier applications. | ISC 无锡固电 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications | SAVANTIC | | ||
Power Transistor (-80V, -4A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications | SAVANTIC | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS • Designed for power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS • Designed for power amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VGt= -3V, lc= -2A) • Complement to Type 2SD2025 APPLICATIONS • Designed for power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER TRANSISTOR (-100V, -8A) Power Transistor ( -100V, - 8A) Power Transistor (100V, 8A) | ROHM 罗姆 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and power driver applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and power driver applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-247 package • Complement to type 2SD2062 • Low collector saturation voltage APPLICATIONS • For power drvier and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-247 package • Complement to type 2SD2062 • Low collector saturation voltage APPLICATIONS • For power drvier and general purpose applications | SAVANTIC | | ||
Silicon PNP triple diffusion planar type(For high power amplification) Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 ■Features ● Satisfactory foward current transfer ratio hFE vs. collector current ICcharacteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Optimum fo | PANASONIC 松下 | | ||
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS ·For high power amplification | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：106.2 Kbytes Page：3 Pages | SAVANTIC | | ||
BJT 双极性三极管 | SPTECH | | ||
Power Transistor (-80V/ -4A) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors 文件：123.95 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistor 文件：124.33 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：106.57 Kbytes Page：3 Pages | SAVANTIC | | ||
Trans Darlington PNP 100V 8A 3-Pin(3+Tab) TO-220FP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：124.07 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：131.39 Kbytes Page：3 Pages | SAVANTIC | | ||
isc Silicon PNP Power Transistor 文件：265.07 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon PNP Power Transistor 文件：134.11 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor 文件：138.77 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：182.07 Kbytes Page：3 Pages | SAVANTIC | |
2SB134产品属性
- 类型
描述
- IC(A)：
-4
- Vcbo(V)：
-80
- Vceo(V)：
-80
- HFE：
1K-10K
- 封装：
TO-220
- 备注：
Darlington
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2026+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ROHM |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ROHM/罗姆 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ROHM |
23+ |
TO-22OF |
50000 |
专做原装正品,假一罚百! |
|||
N/A |
25+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
2019+ |
73 |
全新 发货1-2天 |
||||
ROHM/罗姆 |
24+ |
TO220 |
22055 |
郑重承诺只做原装进口现货 |
|||
24+ |
TO-220FA |
10000 |
全新 |
||||
ROHM |
17+ |
TO-220F |
6200 |
||||
ROHM/罗姆 |
26+ |
43600 |
全新原装现货,假一赔十 |
2SB134芯片相关品牌
2SB134规格书下载地址
2SB134参数引脚图相关
- 5000
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- 2SB1349
- 2SB1348
- 2SB1347
- 2SB1346Q,R,S
- 2SB1346
- 2SB1345
- 2SB1344
- 2SB1343
- 2SB1342
- 2SB1341
- 2SB1340
- 2SB1339
- 2SB1338
- 2SB1337
- 2SB1335A
- 2SB1335
- 2SB1334A
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- 2SB1333
- 2SB1332
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- 2SB1322(A)
- 2SB1320
- 2SB1319
- 2SB1318
- 2SB1317
- 2SB1316
- 2SB1315
- 2SB1314
2SB134数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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