PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

PNP Plastic-Encapsulate Transistors

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PNP Transistors

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中等功率双极型晶体管

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Power Transistor

■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

TRANSISTOR

FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

PNP Plastic-Encapsulate Transistors

文件：256.8 Kbytes Page：2 Pages

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个