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2SB1308晶体管资料
2SB1308别名：2SB1308三极管、2SB1308晶体管、2SB1308晶体三极管
2SB1308生产厂家：TOY
2SB1308制作材料：Si-PNP
2SB1308性质：表面帖装型 （SMD）
2SB1308封装形式：直插封装
2SB1308极限工作电压：30V
2SB1308最大电流允许值：5A
2SB1308最大工作频率：120MHZ
2SB1308引脚数：3
2SB1308最大耗散功率：0.75W
2SB1308放大倍数：
2SB1308图片代号：H-100
2SB1308vtest：30
2SB1308htest：120000000
- 2SB1308atest：5
2SB1308wtest：0.75
2SB1308代换 2SB1308用什么型号代替：2SB1073,2SB1302,
2SB1308价格
参考价格：￥1.7464
型号：2SB1308T100R 品牌：ROHM 备注：这里有2SB1308多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1308批发/采购报价，2SB1308行情走势销售排行榜，2SB1308报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1308 | Power Transistor (-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. | ROHM 罗姆 |   | |
2SB1308 | PowerTransistor FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963. | BILIN 银河微电 | | |
2SB1308 | TRANSISTOR FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | HTSEMI 金誉半导体 | | |
2SB1308 | SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | JIANGSU 长电科技 | | |
2SB1308 | Power Transistor ■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | KEXIN 科信电子 | | |
2SB1308 | TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SB1308 | SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLAS 威伦电子 | | |
2SB1308 | Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | |
2SB1308 | Power Transistor(-50V,-3A) FEATURES Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Excellent DC current gain characterisitics. Complementary the 2SD1963. | DGNJDZ 南晶电子 | | |
2SB1308 | 普通三极管 | FOSAN 富信半导体 | | |
2SB1308 | 双极型晶体管 | GALAXY 银河微电 | | |
2SB1308 | 晶体管 | JSCJ 长晶科技 | | |
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
TRANSISTOR (PNP) 文件：134.56 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | |
2SB1308产品属性
- 类型
描述
- 型号
2SB1308
- 功能描述
两极晶体管 - BJT PNP 20V 3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长晶 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ROHM/罗姆 |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
ROHM/罗姆 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
Rohm |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ROHM/罗姆 |
24+ |
SOT-89 |
33500 |
全新进口原装现货,假一罚十 |
|||
ROHM |
20+ |
SOT89 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ROHM |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
ROHM |
23+ |
NA |
150000 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ROHM |
2016+ |
SOT89 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
2SB1308芯片相关品牌
2SB1308规格书下载地址
2SB1308参数引脚图相关
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- 2SB1294
- 2SB1293
- 2SB1292
- 2SB1291
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- 2SB1289
- 2SB1288
- 2SB1287
- 2SB1286
- 2SB1285
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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