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2SB130晶体管资料

  • 2SB130别名：2SB130三极管、2SB130晶体管、2SB130晶体三极管

  • 2SB130生产厂家：日本松下公司

  • 2SB130制作材料：Ge-PNP

  • 2SB130性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB130封装形式：直插封装

  • 2SB130极限工作电压：32V

  • 2SB130最大电流允许值：1.5A

  • 2SB130最大工作频率：<1MHZ或未知

  • 2SB130引脚数：2

  • 2SB130最大耗散功率：6.5W

  • 2SB130放大倍数：

  • 2SB130图片代号：E-44

  • 2SB130vtest：32

  • 2SB130htest：999900

  • 2SB130atest：1.5

  • 2SB130wtest：6.5

  • 2SB130代换 2SB130用什么型号代替：AD162,AD262,2SB474,3AD50A,

2SB130价格

参考价格：￥1.1060

型号：2SB1302S-TD-E 品牌：ON 备注：这里有2SB130多少钱，2026年最近7天走势，今日出价，今日竞价，2SB130批发/采购报价，2SB130行情走势销售排行榜，2SB130报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1300

PNP SILICON TRANSISTOR

DESCRIPTION The 2SB1300 is designed for use in driver an output stages of audio frequency amplifiers.

NEC

瑞萨

2SB1301

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

RENESAS

瑞萨

2SB1302

Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCP

The 2SB1302 is Bipolar Transisitor, -20V, -5A, Low VCE(sat) PNP Single PCP for high-current switching applications such as DC-DC converters, motor drivers and relay drivers. • Adoption of FBET and MBIT processes\n• Low collector-to-emitter saturation voltage\n• Large current capacity\n• Fast switching speed\n• Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs;

ONSEMI

安森美半导体

2SB1302

High-Current Switching Applications?

Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Applications • DC-DC converters, motor drivers, relay drivers, lam

SANYO

三洋

2SB1302

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Fast switching speed.

KEXIN

科信电子

2SB1302

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

ONSEMI

安森美半导体

2SB1302S-TD-E

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

ONSEMI

安森美半导体

2SB1302T-TD-E

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

ONSEMI

安森美半导体

2SB1308

丝印代码：BFP；Power Transistor(-50V,-3A)

FEATURES Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Excellent DC current gain characterisitics. Complementary the 2SD1963.

DGNJDZ

南晶电子

2SB1308

Low VCE(sat) Transistor

Low VCE(sat)晶体管;

ROHM

罗姆

2SB1308

PowerTransistor

FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963.

BILIN

银河微电

2SB1308

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

WILLAS

威伦电子

2SB1308

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SB1308

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

JIANGSU

长电科技

2SB1308

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SB1308

Power Transistor

■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

KEXIN

科信电子

2SB1308

Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

ROHM

罗姆

2SB1308

TRANSISTOR

FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

HTSEMI

金誉半导体

2SB1308-P

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

MCC

2SB1308-Q

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

MCC

2SB1308-R

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

MCC

2SB1301

Old Company Name in Catalogs and Other Documents

文件：224.57 Kbytes Page：6 Pages

RENESAS

瑞萨

2SB1302

High-Current Switching Applications

文件：100.7 Kbytes Page：4 Pages

SANYO

三洋

2SB1302_10

High-Current Switching Applications

文件：100.7 Kbytes Page：4 Pages

SANYO

三洋

2SB1302_15

PNP Transistors

文件：1.21226 Mbytes Page：3 Pages

KEXIN

科信电子

2SB1302-R

PNP Transistors

文件：1.21226 Mbytes Page：3 Pages

KEXIN

科信电子

2SB1302-S

PNP Transistors

文件：1.21226 Mbytes Page：3 Pages

KEXIN

科信电子

2SB1302-T

PNP Transistors

文件：1.21226 Mbytes Page：3 Pages

KEXIN

科信电子

2SB1302T-TD-E

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 5A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

2SB1306

丝印代码：T103；TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

ROHM

罗姆

2SB1306

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes Page：2 Pages

ROHM

罗姆

2SB1308_15

PNP Transistors

文件：1.18006 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1308_15

TRANSISTOR (PNP)

文件：134.56 Kbytes Page：1 Pages

WINNERJOIN

永而佳

2SB1308-P

PNP Plastic-Encapsulate Transistors

文件：256.8 Kbytes Page：2 Pages

MCC

2SB1308-P

PNP Transistors

文件：1.18006 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1308-P_14

PNP Plastic-Encapsulate Transistors

文件：256.8 Kbytes Page：2 Pages

MCC

2SB1308-P-TP

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB1308-Q

PNP Plastic-Encapsulate Transistors

文件：256.8 Kbytes Page：2 Pages

MCC

2SB1308-Q

PNP Transistors

文件：1.18006 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1308-R

PNP Transistors

文件：1.18006 Mbytes Page：2 Pages

KEXIN

科信电子

2SB1308-R

PNP Plastic-Encapsulate Transistors

文件：256.8 Kbytes Page：2 Pages

MCC

2SB130产品属性

  • 类型

    描述

  • VCEO (V)：

    16

  • hFE min.：

    135

  • hFE max.：

    600

  • Pc (W)：

    0.75

  • Production Status：

    EOL

2SB130供应商更多...

更新时间：2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
2SB1308T100P
ROHM/罗姆
2026+
SOT89
54648
百分百原装现货 实单必成 欢迎询价
询价
中天科工半导体（深圳）有限公司
2SB1308T100P
ROHM
20+
SOT89
32970
原装优势主营型号-可开原型号增税票
询价
深圳市昌和盛利电子有限公司
2SB1308-T100R
ROHM
26+
SOT89
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市富利微电子科技有限公司
2SB1308
ROHM/罗姆
25+
SOT-89
33500
全新进口原装现货,假一罚十
询价
深圳市振宏微科技有限公司
2SB1308
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳诚思涵科技有限公司
2SB1308T100Q
原装ROHM
19+
SOT-89
20000
询价
深圳市科恒伟业电子有限公司
2SB1308T100R
ROHM/罗姆
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市正纳电子有限公司
2SB1308T100Q
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市明嘉莱科技有限公司
2SB1308T100R
ROHM/罗姆
25+
PBFREE
880000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
2SB1308T100R
ROHM
25+23+
SOT89
39392
绝对原装正品现货,全新深圳原装进口现货
询价

2SB130芯片相关品牌

2SB130规格书下载地址

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    2SA2198，全新原装当天发货或门市自取0755-82732291.

    2020-4-24

  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号

    2012-11-9

DdatasheetPDF页码索引

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