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2SB130晶体管资料
2SB130别名：2SB130三极管、2SB130晶体管、2SB130晶体三极管
2SB130生产厂家：日本松下公司
2SB130制作材料：Ge-PNP
2SB130性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB130封装形式：直插封装
2SB130极限工作电压：32V
2SB130最大电流允许值：1.5A
2SB130最大工作频率：<1MHZ或未知
2SB130引脚数：2
2SB130最大耗散功率：6.5W
2SB130放大倍数：
2SB130图片代号：E-44
2SB130vtest：32
2SB130htest：999900
- 2SB130atest：1.5
2SB130wtest：6.5
2SB130代换 2SB130用什么型号代替：AD162,AD262,2SB474,3AD50A,
2SB130价格
参考价格：￥1.1060
型号：2SB1302S-TD-E 品牌：ON 备注：这里有2SB130多少钱，2025年最近7天走势，今日出价，今日竞价，2SB130批发/采购报价，2SB130行情走势销售排行榜，2SB130报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP SILICON TRANSISTOR DESCRIPTION The 2SB1300 is designed for use in driver an output stages of audio frequency amplifiers. | NEC 瑞萨 |   | ||
High-Current Switching Applications? Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Applications • DC-DC converters, motor drivers, relay drivers, lam | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Fast switching speed. | KEXIN 科信电子 | | ||
Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d | ONSEMI 安森美半导体 | | ||
Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d | ONSEMI 安森美半导体 | | ||
Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d | ONSEMI 安森美半导体 | | ||
Power Transistor(-50V,-3A) FEATURES Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Excellent DC current gain characterisitics. Complementary the 2SD1963. | DGNJDZ 南晶电子 | | ||
PowerTransistor FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963. | BILIN 银河微电 | | ||
SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | | ||
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | JIANGSU 长电科技 | | ||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | | ||
Power Transistor ■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | KEXIN 科信电子 | | ||
Power Transistor (-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. | ROHM 罗姆 | | ||
TRANSISTOR FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage | HTSEMI 金誉半导体 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC 美微科 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC 美微科 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO | MCC 美微科 | | ||
Old Company Name in Catalogs and Other Documents 文件：224.57 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
High-Current Switching Applications 文件：100.7 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
High-Current Switching Applications 文件：100.7 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
PNP Transistors 文件：1.21226 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.21226 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.21226 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.21226 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 5A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
TRANSISTORS TO 92L TO-92LS MRT 文件：195.39 Kbytes Page：2 Pages | ROHM 罗姆 | | ||
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages | ROHM 罗姆 | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
TRANSISTOR (PNP) 文件：134.56 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC 美微科 | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC 美微科 | | ||
封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC 美微科 | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC 美微科 | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.18006 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Plastic-Encapsulate Transistors 文件：256.8 Kbytes Page：2 Pages | MCC 美微科 | |
2SB130产品属性
- 类型
描述
- 型号
2SB130
- 制造商
NEC Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
1716 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
2016+ |
SOT89 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM/罗姆 |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
ROHM/罗姆 |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
长晶科技 |
21+ |
SOT-89-3L |
50 |
全新原装鄙视假货 |
|||
CJ/长电 |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ROHM/罗姆 |
24+ |
SOT-89 |
33500 |
全新进口原装现货,假一罚十 |
|||
ROHM |
23+ |
SOT-89 |
63000 |
原装正品现货 |
|||
ROHM |
2024 |
SOT-89 |
55200 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
2SB130规格书下载地址
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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