PNP SILICON TRANSISTOR

DESCRIPTION The 2SB1300 is designed for use in driver an output stages of audio frequency amplifiers.

High-Current Switching Applications?

Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Applications • DC-DC converters, motor drivers, relay drivers, lam

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. ● Fast switching speed.

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PowerTransistor

FEATURES ● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A ● Excellent DC current gain characterisitics. ● Complementary the 2SD1963.

Power Transistor(-50V,-3A)

FEATURES Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Excellent DC current gain characterisitics. Complementary the 2SD1963.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

TRANSISTOR

FEATURES ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Power Transistor

■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltage

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -3A • Collector-base voltage: V(BR)CBO

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package. APPLICATION Power supply circuit, solenoid drive.

FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Complement to Type 2SD1977 APPLICATIONS • Audio frequency power amplifier applications • Recommend for 45-55W audio frequency amplifier output stage applications

isc Silicon PNP Power Transistor

DESCRIPTION • Darlington connection for high DC current gain • Built in resistor between base and emitter • Built in damper diode • Complementary NPN types:2SD2195/2SD1980 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

Power Transistor (??00V,??A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Power Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

Silicon PNP Power Transistor

DESCRIPTION • Good Linearity of hFE • Wide Area of Safe Operation • High DC Current-Gain Bandwidth Product • Complement to Type 2SD1975 APPLICATIONS • High power amplification • Optimum for the output stage of a Hi-Fi audio amplifier.

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 ■ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Optimum for the output stage of a Hi-F

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD1975 • Wide area of safe operation • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS • For high power amplification

Darlington Transistor BUILT-IN DUMPER DIODE AT E-C

DESCRIPTION The 2SB1318 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver. FEATURES ● High DC Current Gain. ● Low Collector Saturation Voltage. ● Built-in a dumper diode at E-C.

Silicon PNP epitaxial planer type(For low-frequency power amplification)

Silicon PNP epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector current IC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type

■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping

Silicon PNP epitaxial planer type

■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1992A ■ Features • Large collector power dissipation PC (600 mW) • Allowing supply with the radial taping

Silicon PNP epitaxial planer type(For low-frequency power amplification)

Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A ■ Features • Allowing supply with the radial taping

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Allowing Supply with The Radial Taping

PNP Plastic Encapsulated Transistor

FEATURES • Allow Supply with The Radial Taping

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Epitaxial Planar Silicon Transistors

Features ● Low saturation voltage. ● Contains diode between collector and emitter. ● Contains bias resistance between collector and emitter. ● Large current capacity. ● Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.

Compact Motor Driver Applications

Compact Motor Driver Applications Features • Contains input resistance (R1), base-to-emitter resistance (RBE). • Contains diode between collector and emitter. • Low saturation voltage. • Large current capacity. • Small-sized package making it easy to provide high density, small-sized hybrid

Compact Motor Driver Applications?

Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and emitter. · Large current capacity. · Small-sized package making it easy to provide high density, small-sized

PNP Epitaxial Planar Silicon Transistors

Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,small-sized hybrid ICs.

Compact Motor Driver Applications?

Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high density, small-sized hybrid I

PNP Epitaxial Planar Silicon Transistors

Features ● Low saturation voltage. ● Contains diode between collector and emitter. ● Contains bias resistance between base and emitter. ● Large current capacity. ● Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

EPITAXIAL PLANAR PNP SILICON TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1778 APPLICATIONS ·Designed for low frequency power amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SD1778 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SD1855 • Low collector saturation voltage APPLICATIONS • For low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SD1855 • Low collector saturation voltage APPLICATIONS • For low frequency power amplifier applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications