| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Transistor Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHMRohm 罗姆罗姆半导体集团 |  |   | |
PNP Plastic-Encapsulate Transistor PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free | WEITRON Weitron Technology |  | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | | |
Power Transistor (−80V, −1A) 文件：97.68 Kbytes Page：4 Pages | ROHMRohm 罗姆罗姆半导体集团 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR 文件：236.3 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWER TRANSISTOR 文件：236.3 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
1822+ |
SOT-89 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ROHM |
23+ |
SOT89 |
11092 |
||||
ROHM |
24+ |
SOT-89 |
7200 |
新进库存/原装 |
|||
ROHM |
24+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
CJ/长电/长晶 |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
CJ |
19+ |
SOT-89 |
9000 |
||||
ROHM/罗姆 |
24+ |
SOT89 |
95000 |
郑重承诺只做原装进口现货 |
|||
ROHM/罗姆 |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Rohm(罗姆) |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
ROHM |
2020+ |
NA |
12000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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DdatasheetPDF页码索引
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