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2SB1216S价格
参考价格：￥2.0156
型号：2SB1216S-E 品牌：ON 备注：这里有2SB1216S多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1216S批发/采购报价，2SB1216S行情走势销售排行榜，2SB1216S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 |   | ||
High-Current Switching Applications High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert | SANYO 三洋 | | ||
HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816 | UTC 友顺 | | ||
High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1816 | KEXIN 科信电子 | | ||
High-Current Switching Applications 文件：154.87 Kbytes Page：5 Pages | SANYO 三洋 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 4A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 4A TPFA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | |
2SB1216S产品属性
- 类型
描述
- 型号
2SB1216S
- 功能描述
两极晶体管 - BJT BIP PNP 4A 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TP-FA |
1400 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
4625 |
原装现货,当天可交货,原型号开票 |
|||
SANYO |
2016+ |
TO-252 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANYO/三洋 |
25+ |
SOT252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANYO |
24+ |
SOT-252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SANYO |
TO252 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SANYO/三洋 |
TO252 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
SANYO/三洋 |
25+ |
SOT-252 |
860000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
25+ |
TO-252 |
32000 |
SANYO/三洋全新特价2SB1216T-TL-E即刻询购立享优惠#长期有货 |
|||
SANYO/三洋 |
22+ |
TO252 |
12245 |
现货,原厂原装假一罚十! |
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2SB1216S规格书下载地址
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2SB1216S数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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