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2SB1216晶体管资料

2SB1216别名：2SB1216三极管、2SB1216晶体管、2SB1216晶体三极管
2SB1216生产厂家：日本三洋公司
2SB1216制作材料：Si-PNP
2SB1216性质：开关管（S）_功率放大（L）
2SB1216封装形式：直插封装
2SB1216极限工作电压：120V
2SB1216最大电流允许值：4A
2SB1216最大工作频率：130MHZ
2SB1216引脚数：3
2SB1216最大耗散功率：20W
2SB1216放大倍数：
2SB1216图片代号：A-80
2SB1216vtest：120
2SB1216htest：130000000
2SB1216atest：4
2SB1216wtest：20

2SB1216代换 2SB1216用什么型号代替：2SA1647,2SB930A,

2SB1216价格

参考价格：￥2.0156

型号：2SB1216S-E 品牌：ON 备注：这里有2SB1216多少钱，2026年最近7天走势，今日出价，今日竞价，2SB1216批发/采购报价，2SB1216行情走势销售排行榜，2SB1216报价。

型号	功能描述	生产厂家企业	LOGO
2SB1216	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1816	KEXIN 科信电子	KEXIN
2SB1216	High-Current Switching Applications High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert	SANYO 三洋	SANYO
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package facilitating compactness of sets • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	双极晶体管，-100V，-4A，低 VCE (sat)，PNP 单 2SB1216 is a Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single TP/TP-FA for high-Current Switching Application. • Low collector-to-emitter saturation voltage\n• Good linearity of hFE\n• Small and slim package facilitating compactness of sets\n• High fT\n• Fast switching time;	ONSEMI 安森美半导体	ONSEMI
2SB1216	100V,4A,General Purpose PNP Bipolar Transistor	GALAXY 银河微电	GALAXY
2SB1216	Bipolar Transistor	UTC 友顺	UTC
2SB1216	High-Current Switching Applications 文件：154.87 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SB1216-251	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216-252	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216G-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216L-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216_1	High-Current Switching Applications 文件：154.87 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SB1216_13	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216_15	PNP Transistors 文件：1.44441 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1216-Q	PNP Transistors 文件：1.44441 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1216-R	PNP Transistors 文件：1.44441 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1216-S	PNP Transistors 文件：1.44441 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1216S-E	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 100V 4A TP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 100V 4A TPFA 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216-T	PNP Transistors 文件：1.44441 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1216T-E	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI

2SB1216产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
PNP
Type：
Low VCE(sat)
VCE(sat) Max (V)：
0.5
IC Cont. (A)：
4
VCEO Min (V)：
100
VCBO (V)：
120
VEBO (V)：
6
VBE(sat) (V)：
0.9
hFE Min：
140
hFE Max：
280
fT Min (MHz)：
130
PTM Max (W)：
1
Package Type：
DPAK-3/TO-252-3

2SB1216供应商更多...

更新时间：2026-5-15 15:11:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SB1216T-H	onsemi	25+	TP	22412	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	2SB1216S-TL-E	onsemi(安森美)	24+	TP-FA	1400	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市纳立科技有限公司	2SB1216S-TL-E	ON-SEMI	22+	N/A	44800	原装正品香港现货	询价
深圳市宏捷佳电子科技有限公司	2SB1216-TL	SANYO	2023+	TO-252	50000	原装现货	询价
深圳市明嘉莱科技有限公司	2SB1216S-TL	SANYO/三洋	25+	TO252	880000	明嘉莱只做原装正品现货	询价
深圳市安富世纪电子有限公司	2SB1216S	POWER INTEGRATIONS/帕沃英蒂格	23+	TO251	6000	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	2SB1216	SANYO/三洋	2447	TO-251	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威雅利发展有限公司	2SB1216T-TL-E	ON	1734+	SOT252	50	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市东来宝电子科技有限公司	2SB1216T-TL-E其他被动元件	SANYO/三洋	24+	TO-252	43200	郑重承诺只做原装进口现货	询价
深圳市华斯顿科技有限公司	2SB1216S-TL	SANYO	25+23+	TO252	37615	绝对原装正品全新进口深圳现货	询价

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DdatasheetPDF页码索引

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2SB1216晶体管资料

2SB1216价格

2SB1216产品属性

2SB1216供应商更多...

2SB1216芯片相关品牌

2SB1216规格书下载地址

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2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引