2SB1216晶体管资料

  • 2SB1216别名:2SB1216三极管、2SB1216晶体管、2SB1216晶体三极管

  • 2SB1216生产厂家:日本三洋公司

  • 2SB1216制作材料:Si-PNP

  • 2SB1216性质:开关管 (S)_功率放大 (L)

  • 2SB1216封装形式:直插封装

  • 2SB1216极限工作电压:120V

  • 2SB1216最大电流允许值:4A

  • 2SB1216最大工作频率:130MHZ

  • 2SB1216引脚数:3

  • 2SB1216最大耗散功率:20W

  • 2SB1216放大倍数

  • 2SB1216图片代号:A-80

  • 2SB1216vtest:120

  • 2SB1216htest:130000000

  • 2SB1216atest:4

  • 2SB1216wtest:20

  • 2SB1216代换 2SB1216用什么型号代替:2SA1647,2SB930A,

2SB1216价格

参考价格:¥2.0156

型号:2SB1216S-E 品牌:ON 备注:这里有2SB1216多少钱,2025年最近7天走势,今日出价,今日竞价,2SB1216批发/采购报价,2SB1216行情走势销售排行榜,2SB1216报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1216

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

2SB1216

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

2SB1216

High-Current Switching Applications

High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert

SANYO

三洋

2SB1216

HIGH CURRENT SWITCHIG APPLICATIONS

■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816

UTC

友顺

2SB1216

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent linearity of hFE • Small and slim package facilitating compactness of sets • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

ISC

无锡固电

2SB1216

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

2SB1216

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

2SB1216

High-Current Switching Applications

■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1816

KEXIN

科信电子

2SB1216

双极晶体管,-100V,-4A,低 VCE (sat),PNP 单

ONSEMI

安森美半导体

2SB1216

High-Current Switching Applications

文件:154.87 Kbytes Page:5 Pages

SANYO

三洋

2SB1216

100V,4A,General Purpose PNP Bipolar Transistor

GALAXY

银河微电

2SB1216

Bipolar Transistor

UTC

友顺

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

HIGH CURRENT SWITCHIG APPLICATIONS

■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816

UTC

友顺

HIGH CURRENT SWITCHIG APPLICATIONS

■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816

UTC

友顺

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit

ONSEMI

安森美半导体

High-Current Switching Applications

文件:154.87 Kbytes Page:5 Pages

SANYO

三洋

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

PNP Transistors

文件:1.44441 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.44441 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.44441 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.44441 Mbytes Page:3 Pages

KEXIN

科信电子

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 4A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 4A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

PNP Transistors

文件:1.44441 Mbytes Page:3 Pages

KEXIN

科信电子

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

文件:366.77 Kbytes Page:9 Pages

ONSEMI

安森美半导体

2SB1216产品属性

  • 类型

    描述

  • 型号

    2SB1216

  • 功能描述

    两极晶体管 - BJT BIP PNP 4A 100V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
24+
60000
SANYO
1922+
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
SANYO
19+
SOT-252
20000
700
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SANYO/三洋
22+
TO252
12245
现货,原厂原装假一罚十!
ON
24+
NA
3000
进口原装 假一罚十 现货
SANYO/三洋
25+
TO-252
32000
SANYO/三洋全新特价2SB1216T-TL-E即刻询购立享优惠#长期有货
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON
1734+
SOT252
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANYO/三洋
14+
TO-252
700
只做原装正品

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