PNP Plastic-Encapsulate Transistors

PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25
) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st

PNP Plastic-Encapsulate Transistors

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PNP Transistors

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中等功率双极型晶体管

PNP Plastic-Encapsulate Transistors

PNP Plastic-Encapsulate Transistors P/b Lead(Pb)-Free

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Medium Power Transistor

FEATURES • Low power dissipation 0.5W

Medium Power Transistor

Features ● Low VCE(sat) ● Compliments to 2SD1664

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

PNP Plastic-Encapsulate Transistors

文件：542.22 Kbytes Page：4 Pages

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS PNP 32V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个