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2SB1132晶体管资料

2SB1132别名：2SB1132三极管、2SB1132晶体管、2SB1132晶体三极管
2SB1132生产厂家：TOY
2SB1132制作材料：Si-PNP
2SB1132性质：表面帖装型（SMD）_低频或音频放大（LF）_输出极
2SB1132封装形式：直插封装
2SB1132极限工作电压：40V
2SB1132最大电流允许值：1A
2SB1132最大工作频率：150MHZ
2SB1132引脚数：3
2SB1132最大耗散功率：
2SB1132放大倍数：
2SB1132图片代号：A-70
2SB1132vtest：40
2SB1132htest：150000000
2SB1132atest：1
2SB1132wtest：0

2SB1132代换 2SB1132用什么型号代替：BCX51,BCX52,BCX53,2SA1203,2SA1364,2SB766,2SB766A,2SB1002,2SB1115,2SB1122,2SB1123,

2SB1132价格

参考价格：￥0.7349

型号：2SB1132T100P 品牌：ROHM 备注：这里有2SB1132多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1132批发/采购报价，2SB1132行情走势销售排行榜，2SB1132报价。

型号	功能描述	生产厂家&企业	LOGO
2SB1132	Medium Power Transistor Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1132	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL 东电电子	TEL
2SB1132	PNP Silicon Medium Power Transistor FEATURES • Low power dissipation 0.5W	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1132	Medium Power Transistor Features ● Low VCE(sat) ● Compliments to 2SD1664	KEXIN 科信电子	KEXIN
2SB1132	TRANSISTOR (PNP) FEATURES • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664	HTSEMI 金誉半导体	HTSEMI
2SB1132	Medium Power Transistor (-32V,??1A) Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1132	SOT-89 Plastic-Encapsulate Transistors SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Low VCE(sat) • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司	WILLAS
2SB1132	PNP General Purpose Amplifier FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). Complementary NPN type available 2SD1664. APPLICATIONS This device is designed as a general purpose amplifier and switching.	DGNJDZ 南晶电子	DGNJDZ
2SB1132	-1A, -40V PNP Silicon Medium Power Transistor 文件：462.54 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1132	PNP Transistors 文件：798.72 Kbytes Page：4 Pages	YFWDIODE 佑风微电子	YFWDIODE
2SB1132	SOT-89 Transistor(PNP) 文件：1.549 Mbytes Page：4 Pages	LUGUANG 鲁光电子	LUGUANG
2SB1132	Silicon PNP transistor in a SOT-89 Plastic Package 文件：1.77668 Mbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SB1132	PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR 文件：556.07 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1132	PNP General Purpose Amplifier 文件：202.23 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SB1132	MEDIUM POWER TRANSISTOR 文件：173.84 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1132	Low VCE(sat) 0.2V(Typ) IC/IB=-500mA/-50mA 文件：124.03 Kbytes Page：2 Pages	MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司	MAKOSEMI
2SB1132	SOT-89-3L Plastic-Encapsulate Transistors 文件：1.60068 Mbytes Page：4 Pages	JIANGSU 长电科技	JIANGSU
2SB1132	Plastic-Encapsulate Transistors 文件：193.82 Kbytes Page：2 Pages	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司	HOTTECH
2SB1132	Medium Power Transistor (−32V,−1A) 文件：79.9 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1132	Medium Power Transistor (-32V, -1A) 文件：179.26 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1132	PNP Silicon Medium Power Transistor 文件：177.46 Kbytes Page：3 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1132L-P-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC 美微科	MCC
2SB1132-P-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132PT	PNP Medium Power Transistor SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere FEATURE * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Small flat package. ( SC-62/SOT-89) APPLICATION * Telephony and prof	CHENMKO 力勤	CHENMKO
2SB1132-P-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC 美微科	MCC
2SB1132-Q-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC 美微科	MCC
2SB1132-R-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132T100P	Medium Power Transistor (-32V,??1A) Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132-X-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-X-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-X-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132_09	Medium Power Transistor (-32V, -1A) 文件：179.26 Kbytes Page：5 Pages	ROHM 罗姆	ROHM

2SB1132产品属性

类型
描述
型号
2SB1132
制造商
ROHM Semiconductor
功能描述
Bipolar Junction Transistor, PNP Type, SC-62

2SB1132供应商更多...

更新时间：2025-8-7 11:19:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	2SB1132	ROHM	24+	SOT89	2650	原装优势!绝对公司现货	询价
深圳市坤融电子科技有限公司	2SB1132FD5T100R	ROHM/罗姆	24+	SOT-89	2400	原厂授权代理价格绝对优势	询价
深圳市毅创弘电子科技有限公司	2SB1132	长电JIANGSU	24+	SOT-89	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市锦喆鸿电子有限公司	2SB1132	ROHM	21+	SOT89	12588	原装正品,自己库存假一罚十	询价
深圳市恒佳微电子有限公司	2SB1132	长电	21+		10560	十年专营,原装现货,假一赔十	询价
深圳市富利微电子科技有限公司	2SB1132	ROHM/罗姆	24+	SOT-89	33500	全新进口原装现货,假一罚十	询价
中天科工半导体（深圳）有限公司	2SB1132T100R	ROHM/罗姆	25+	原装	32000	ROHM/罗姆全新特价2SB1132T100R即刻询购立享优惠#长期有货	询价
深圳市能元时代电子有限公司	2SB1132G-R	UTC/友顺	23+	SOT	28650	主营品牌深圳百分百原装现货假一罚十绝对价优	询价
深圳市赛特兴科技有限公司	2SB1132T100Q	ROHM	23+	SOT-89	1000	正规渠道,只有原装!	询价
千层芯半导体(深圳)有限公司	2SB1132	长电	24+	SOT89	20000	一级代理原装现货假一罚十	询价

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2012-11-9

DdatasheetPDF页码索引

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2SB1132晶体管资料

2SB1132价格

2SB1132产品属性

2SB1132供应商更多...

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引