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2SB113晶体管资料

2SB113别名：2SB113三极管、2SB113晶体管、2SB113晶体三极管
2SB113生产厂家：日本日电公司
2SB113制作材料：Ge-PNP
2SB113性质：低频或音频放大（LF）
2SB113封装形式：直插封装
2SB113极限工作电压：25V
2SB113最大电流允许值：0.05A
2SB113最大工作频率：<1MHZ或未知
2SB113引脚数：3
2SB113最大耗散功率：0.1W
2SB113放大倍数：β>61
2SB113图片代号：C-47
2SB113vtest：25
2SB113htest：999900
2SB113atest：0.05
2SB113wtest：0.1

2SB113代换 2SB113用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

2SB113价格

参考价格：￥0.7349

型号：2SB1132T100P 品牌：ROHM 备注：这里有2SB113多少钱，2025年最近7天走势，今日出价，今日竞价，2SB113批发/采购报价，2SB113行情走势销售排行榜，2SB113报价。

型号	功能描述	生产厂家企业	LOGO
2SB1130AM	Epitaxial Planar PNP Silicon Transistor Features 1) High breakdwon voltage: BVCEO = -160V. 2) High transition frequency. 3) Small output capacitance. 4) Complementary pair with 2SD1665AM.	ROHM 罗姆	ROHM
2SB1131	Strobe,High-Current Switching Applications Applications 1. Strobes, power supplies, relay drivers, lamp drivers. Features 1. Adoption of FBET, MBIT processes. 2. Low saturation voltage. 3. Large current capacity. 4. Fast switching time.	SANYO 三洋	SANYO
2SB1132	TRANSISTOR (PNP) FEATURES • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664	HTSEMI 金誉半导体	HTSEMI
2SB1132	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1132	Medium Power Transistor Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132	Medium Power Transistor (-32V,??1A) Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132	Medium Power Transistor Features ● Low VCE(sat) ● Compliments to 2SD1664	KEXIN 科信电子	KEXIN
2SB1132	PNP Silicon Medium Power Transistor FEATURES • Low power dissipation 0.5W	SECOS 喜可士	SECOS
2SB1132	PNP General Purpose Amplifier FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). Complementary NPN type available 2SD1664. APPLICATIONS This device is designed as a general purpose amplifier and switching.	DGNJDZ 南晶电子	DGNJDZ
2SB1132	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1132	SOT-89 Plastic-Encapsulate Transistors SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Low VCE(sat) • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLAS 威伦电子	WILLAS
2SB1132	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SB1132L-P-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-P-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-Q-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-R-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132L-X-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC	MCC
2SB1132-P-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132PT	PNP Medium Power Transistor SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere FEATURE * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Small flat package. ( SC-62/SOT-89) APPLICATION * Telephony and prof	CHENMKO 力勤	CHENMKO
2SB1132-P-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-P-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC	MCC
2SB1132-Q-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-Q-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R	PNP Plastic-Encapsulate Transistors PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM= 0.5W(Tamb=25) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO= -40V • Operating and st	MCC	MCC
2SB1132-R-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-AB3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-R-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132T100P	Medium Power Transistor (-32V,??1A) Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1132-X-AB3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-X-TN3-R	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1132-X-TN3-T	MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)	UTC 友顺	UTC
2SB1133	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT	WINGS 永盛电子	WINGS
2SB1133	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1666 • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For low-frequency and general-purpose amplifier applications	SAVANTIC	SAVANTIC
2SB1133	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1666 • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For low-frequency and general-purpose amplifier applications	ISC 无锡固电	ISC
2SB1133	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD1666 • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For low-frequency and general-purpose amplifier applications	JMNIC 锦美电子	JMNIC
2SB1134	50V/5A Switching Applications Applications 1. Relay drivers, high-speed inverters, and other general high-current switching applications.	SANYO 三洋	SANYO
2SB1135	50V/7A Switching Applications 50V/7A switching application Features 1. Low-saturation collector-to-emitter voltage : Vce(sat) = -0.4V max 2. Wide ASO leading to high resistance to breakdown. 3. Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SB1135	50V/7A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SB1135_V01	50V/7A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SB1136	50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other genral high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package	SANYO 三洋	SANYO
2SB1131	PNP Epitaxial Planar Silicon Transistor Strobe, High-Current Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB1132	晶体管	JSCJ 长晶科技	JSCJ
2SB1132	Driver Transistor	ROHM 罗姆	ROHM

2SB113产品属性

类型
描述
型号
2SB113
制造商
ROHM
制造商全称
Rohm
功能描述
Epitaxial Planar PNP Silicon Transistor

2SB113供应商更多...

更新时间：2025-12-25 15:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳立科技有限公司	2SB1131T-AE		三年内		1983	只做原装正品	询价
深圳市拓亿芯电子有限公司	2SB1132	ROHM/罗姆	25+	SOT89	15000	全新原装现货,价格优势	询价
艾睿（深圳）半导体有限公司	2SB1131T	SANYO/三洋	2447	TO-92L	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市创新迹电子有限公司	2SB1131S	SANYO	22+	TO-92L	20000	公司只有原装品质保证	询价
深圳市毅创弘电子科技有限公司	2SB1132	长电JIANGSU	24+	SOT-89	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市卓越微芯电子有限公司	2SB1132	CJ	25+	SOT89	788	百分百原装正品真实公司现货库存本公司只做原装可	询价
贸泽芯城（深圳）电子科技有限公司	2SB1131T	SANYO/三洋	23+	TO-92L	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
上海鑫科润电子科技有限公司	2SB1132	ROHN	0808+	SOT89	1000	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	2SB1132	ROHM	25+	SOT89	2650	原装优势!绝对公司现货	询价
深圳市一线半导体有限公司	2SB1131T	SANYO	24+	TO-92L	1400		询价

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2012-11-9

DdatasheetPDF页码索引

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2SB113晶体管资料

2SB113价格

2SB113产品属性

2SB113供应商更多...

2SB113芯片相关品牌

2SB113规格书下载地址

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2SA928AL-TO92NLB-Y-TG

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2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引