PNP Medium Power Transistor

SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere FEATURE * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Small flat package. ( SC-62/SOT-89) APPLICATION * Telephony and prof

PNP Medium Power Transistor SURFACE MOUNT

MEDIUM POWER TRANSISTOR

DESCRIPTION The UTC 2SB1132is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

PNP Plastic-Encapsulate Transistors

PNP Plastic-Encapsulate Transistors P/b Lead(Pb)-Free

Medium Power Transistor

Features ● Low VCE(sat) ● Compliments to 2SD1664

PNP Silicon Medium Power Transistor

FEATURES • Low power dissipation 0.5W

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃