Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

Complement to Type 2SC6011A

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011A APPLICATIONS • Designed for audio and general purpose applications