Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

Complement to Type 2SC6011A

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011A APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3P Bulk

音频功放晶体管

双极型晶体管

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications