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2SA21晶体管资料

2SA21别名：2SA21三极管、2SA21晶体管、2SA21晶体三极管
2SA21生产厂家：日本日电公司
2SA21制作材料：Ge-PNP
2SA21性质：调幅（AM）_中频放大（ZF）
2SA21封装形式：直插封装
2SA21极限工作电压：12V
2SA21最大电流允许值：0.002A
2SA21最大工作频率：55MHZ
2SA21引脚数：3
2SA21最大耗散功率：
2SA21放大倍数：
2SA21图片代号：C-47
2SA21vtest：12
2SA21htest：55000000
2SA21atest：0.002
2SA21wtest：0

2SA21代换 2SA21用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA104,3AG53A,

2SA21价格

参考价格：￥1.0551

型号：2SA2112-AN 品牌：ON 备注：这里有2SA21多少钱，2025年最近7天走势，今日出价，今日竞价，2SA21批发/采购报价，2SA21行情走势销售排行榜，2SA21报价。

型号	功能描述	生产厂家企业	LOGO
2SA2112	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes	ONSEMI 安森美半导体	ONSEMI
2SA2112	High Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes	SANYO 三洋	SANYO
2SA2112-AN	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes	ONSEMI 安森美半导体	ONSEMI
2SA2119K	Low frequency transistor Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER	ROHM 罗姆	ROHM
2SA2119PT	Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-23) * A collector current is large. * Collector saturation voltage is low. VCE(sat)	CHENMKO 力勤	CHENMKO
2SA2120	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2121	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2124	Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2124	High-Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment	SANYO 三洋	SANYO
2SA2124-TD-E	Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2125	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo	ONSEMI 安森美半导体	ONSEMI
2SA2125	PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash	SANYO 三洋	SANYO
2SA2125-TD-E	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo	ONSEMI 安森美半导体	ONSEMI
2SA2125-TD-H	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo	ONSEMI 安森美半导体	ONSEMI
2SA2126	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2126	PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers.	SANYO 三洋	SANYO
2SA2126	isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter,relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2126	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash	ISC 无锡固电	ISC
2SA2126	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash	ISC 无锡固电	ISC
2SA2126-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash	ISC 无锡固电	ISC
2SA2126-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash	ISC 无锡固电	ISC
2SA2126-E	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2126-H	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2126-TL-E	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2126-TL-H	Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2127	Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2127	High-Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Low saturation voltage. • High current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SA2127-AE	Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2142	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2151	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	ALLEGRO	ALLEGRO
2SA2151	isc Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications	ISC 无锡固电	ISC
2SA2151	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	Sanken 三垦	Sanken
2SA2151	Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA2151A	Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA2151A	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	Sanken 三垦	Sanken
2SA2151A	Complement to Type 2SC6011A DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011A APPLICATIONS • Designed for audio and general purpose applications	ISC 无锡固电	ISC
2SA2151A	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	ALLEGRO	ALLEGRO
2SA2153	Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2153	PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Low saturation voltage. • High current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SA2153-TD-E	Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SA2169	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2169	PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.	SANYO 三洋	SANYO
2SA2169	isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC6017 APPLICATIONS • relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2169	Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·Complementary to 2SC6017 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2169	Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·Complementary to 2SC6017 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2169-251	Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·Complementary to 2SC6017 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2169-252	Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·Complementary to 2SC6017 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SA2169-E	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2169-TL-E	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SA2179	PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulators, drive circuit).	SANYO 三洋	SANYO
2SA2180	PNP Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).	SANYO 三洋	SANYO
2SA2181	PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).	SANYO 三洋	SANYO
2SA2182	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2182	Power Amplifier Applications Driver Stage Amplifier Applications Features ・High transition frequency: fT = 80 MHz (typ.)	TOSHIBA 东芝	TOSHIBA
2SA2183	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2183	High Current Switching Applications Features - Low collector-emitter saturation : VCE(sat) = −1.0 V（max）	TOSHIBA 东芝	TOSHIBA
2SA2184	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA2184	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.)@IC= -0.3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.	ISC 无锡固电	ISC
2SA2184-HF	Silicon Power Transistor Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.	COMCHIP 典琦	COMCHIP
2SA2186	PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • High current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO

2SA21产品属性

类型
描述
型号
2SA21
制造商
Distributed By MCM
功能描述
SUB ONLY TRANSISTOR TO-5 -20V -.4A .12W

2SA21供应商更多...

更新时间：2025-12-25 13:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市博中泰实业有限公司	2SA2151A	SANKEN/三肯	24+	TO-3P	60000		询价
深圳市祥瑞智科技有限公司	2SA2151A/2SC6011A	SANKEN	25+	TO-3P	8000	原厂原装,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	2SA2151A-P/2SC6011A-P	SANKEN/三垦	23+	TO-3P	60000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2SA2151A-Y/2SC6011A-Y	SANKEN	24+	NA/	5901	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2SA2151A	SANKEN/三垦	25+	TO-3P	45000	SANKEN/三垦全新现货2SA2151A即刻询购立享优惠#长期有排单订	询价
现代芯城（深圳）科技有限公司	2SA2151		24+	N/A	70000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛美科科技有限公司	2SA2151A-P	SANKEN		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SA2151A-P	SANKEN	21+	明嘉莱只做原装正品现货	2510000	TO3P-3L	询价
艾睿（深圳）半导体有限公司	2SA2151A	SANKEN	2447	TO-3P	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	2SA2151A-Y/2SC6011A-Y	SANKEN	23+	TO3P	6500	专注配单,只做原装进口现货	询价

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