丝印代码：2SA2184；Silicon Power Transistor

Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.

Power transistor for high-speed switching applications

Application Scope：High voltage switching\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -1 A \nCollector Current ICP -2 A \nCollector power dissipation PC 20 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -550 V ;

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.)@IC= -0.3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.

High Voltage Switching Applications

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General Purpose Transistor