Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.)@IC= -0.3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.

Power transistor for high-speed switching applications

High Voltage Switching Applications

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Silicon Power Transistor

Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.

General Purpose Transistor